Part Details for STF9NK60ZD by STMicroelectronics
Results Overview of STF9NK60ZD by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STF9NK60ZD Information
STF9NK60ZD by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for STF9NK60ZD
STF9NK60ZD CAD Models
STF9NK60ZD Part Data Attributes
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STF9NK60ZD
STMicroelectronics
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Datasheet
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STF9NK60ZD
STMicroelectronics
7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1980-01-04 | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 32 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STF9NK60ZD
This table gives cross-reference parts and alternative options found for STF9NK60ZD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STF9NK60ZD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK80ZFP | STMicroelectronics | $0.6407 | N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package | STF9NK60ZD vs STP4NK80ZFP |
| STP14NK60ZFP | STMicroelectronics | $1.2981 | N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package | STF9NK60ZD vs STP14NK60ZFP |
| STP11NK40ZFP | STMicroelectronics | $1.3581 | N-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in TO-220FP package | STF9NK60ZD vs STP11NK40ZFP |
| SPA11N80C3 | Infineon Technologies AG | $1.7153 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | STF9NK60ZD vs SPA11N80C3 |
| SPA20N60C3 | Infineon Technologies AG | $2.2359 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | STF9NK60ZD vs SPA20N60C3 |
| STP60NF06FP | STMicroelectronics | Check for Price | N-Channel 60V - 0.014Ohm - 60A - TO-220FP StripFET(TM) II POWER MOSFET | STF9NK60ZD vs STP60NF06FP |
| STP16NF06FP | STMicroelectronics | Check for Price | 11A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN | STF9NK60ZD vs STP16NF06FP |
| STP14NF12FP | STMicroelectronics | Check for Price | N-Channel 120V - 0.16Ohm - 14A - TO-220FP LOOhm GATE CHARGE StripFET(TM) POWER MOSFET | STF9NK60ZD vs STP14NF12FP |
| STP3NB100FP | STMicroelectronics | Check for Price | 3A, 1000V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STF9NK60ZD vs STP3NB100FP |
| STP9NC65FP | STMicroelectronics | Check for Price | 8A, 650V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STF9NK60ZD vs STP9NC65FP |
STF9NK60ZD Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the STF9NK60ZD is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the STF9NK60ZD, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
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The recommended gate drive voltage for the STF9NK60ZD is between 10V and 15V, with a maximum gate-source voltage (Vgs) of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide breakdown.
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To ensure proper cooling of the STF9NK60ZD, you should provide a heat sink with a sufficient thermal conductivity, and apply a thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to keep the junction temperature below 150°C, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)) should be minimized.
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The maximum switching frequency for the STF9NK60ZD depends on the specific application and the gate drive circuitry. However, as a general guideline, the maximum switching frequency should not exceed 100 kHz to ensure reliable operation and to prevent excessive switching losses.