Datasheets
STF9HN65M2 by: STMicroelectronics

N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

Part Details for STF9HN65M2 by STMicroelectronics

Results Overview of STF9HN65M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STF9HN65M2 Information

STF9HN65M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STF9HN65M2

Part # Distributor Description Stock Price Buy
DISTI # 497-16014-5-ND
DigiKey MOSFET N-CH 650V 5.5A TO220FP Min Qty: 1 Lead time: 16 Weeks Container: Tube 12
In Stock
  • 1 $1.5000
$1.5000 Buy Now
DISTI # STF9HN65M2
Avnet Silica Trans MOSFET NCH 600V 55A 3Pin TO220FP Tube (Alt: STF9HN65M2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now

Part Details for STF9HN65M2

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STF9HN65M2 Part Data Attributes

STF9HN65M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STF9HN65M2 STMicroelectronics N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STF9HN65M2 Related Parts

STF9HN65M2 Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) for the STF9HN65M2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the voltage supply (VCC) and current limits. Additionally, ensure the input and output pins are properly terminated, and the device is operated within the specified frequency range.

  • For optimal thermal management, use a multi-layer PCB with a solid ground plane and ensure good thermal conductivity between the device and the PCB. Follow STMicroelectronics' recommended PCB layout guidelines and thermal management techniques, such as using thermal vias and heat sinks.

  • The STF9HN65M2 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, wrist straps, and mats, and ensure the device is properly grounded during handling.

  • Follow STMicroelectronics' recommended test and measurement procedures, including using a proper test fixture, ensuring proper signal termination, and using a high-speed oscilloscope to measure signal integrity. Additionally, consult the datasheet and application notes for specific testing guidelines.

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