-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in TO-220FP package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STF7NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
94T3406
|
Newark | Power Mosfet, N Channel, 5 A, 600 V, 0.84 Ohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STF7NM60N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 740 |
|
$0.8990 / $2.2400 | Buy Now |
DISTI #
497-10570-5-ND
|
DigiKey | MOSFET N-CH 600V 5A TO220FP Min Qty: 1 Lead time: 14 Weeks Container: Tube |
795 In Stock |
|
$1.2705 / $2.2800 | Buy Now |
DISTI #
STF7NM60N
|
Avnet Americas | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: STF7NM60N) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$1.2100 / $1.2866 | Buy Now |
DISTI #
511-STF7NM60N
|
Mouser Electronics | MOSFETs N-Ch 600 V 4.7 A MDmesh 2nd Gen RoHS: Compliant | 601 |
|
$1.2700 / $1.6300 | Buy Now |
DISTI #
V79:2366_24002865
|
Arrow Electronics | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Date Code: 1742 | Americas - 4214 |
|
$0.9947 | Buy Now |
DISTI #
E02:0323_03155867
|
Arrow Electronics | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2508 | Europe - 1443 |
|
$1.4324 / $2.5705 | Buy Now |
|
STMicroelectronics | N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in TO-220FP package RoHS: Compliant Min Qty: 1 | 601 |
|
$1.2900 / $1.6000 | Buy Now |
|
Future Electronics | N-Channel 600 V 0.9 Ω MDmesh™ Power MOSFET - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Container: Tube | 500Tube |
|
$1.3700 / $1.4700 | Buy Now |
|
Future Electronics | N-Channel 600 V 0.9 Ω MDmesh™ Power MOSFET - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube | 0Tube |
|
$1.3700 / $1.4400 | Buy Now |
DISTI #
35894472
|
Verical | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 6 Package Multiple: 1 Date Code: 1742 | Americas - 4214 |
|
$0.9947 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
STF7NM60N
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STF7NM60N
STMicroelectronics
N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in TO-220FP package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 119 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 20 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STF7NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STF7NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STF19NM50N | STMicroelectronics | $0.6733 | N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP | STF7NM60N vs STF19NM50N |
STF10NM60N | STMicroelectronics | $0.8152 | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220FP package | STF7NM60N vs STF10NM60N |
STF6N95K5 | STMicroelectronics | $1.4523 | N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in TO-220FP package | STF7NM60N vs STF6N95K5 |
STF18N60M2 | STMicroelectronics | $1.4929 | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package | STF7NM60N vs STF18N60M2 |
STF11NM50N | STMicroelectronics | $1.6222 | N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package | STF7NM60N vs STF11NM50N |
STF20N95K5 | STMicroelectronics | $3.6728 | N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220FP package | STF7NM60N vs STF20N95K5 |
The maximum junction temperature that the STF7NM60N can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate resistor value for the STF7NM60N is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
Yes, the STF7NM60N is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.
To protect the STF7NM60N from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are also ESD-protected. Avoid touching the device's pins or exposing it to static electricity.