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Part Details for STF5N62K3 by STMicroelectronics
Results Overview of STF5N62K3 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STF5N62K3 Information
STF5N62K3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF5N62K3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3402
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Newark | Mosfet Transistor, N Channel, 4.2 A, 620 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant: Yes |Stmicroelectronics STF5N62K3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 578 |
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$1.2100 / $2.6700 | Buy Now |
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DISTI #
497-12583-5-ND
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DigiKey | MOSFET N-CH 620V 4.2A TO220FP Min Qty: 1 Lead time: 13 Weeks Container: Tube | Temporarily Out of Stock |
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$0.9982 / $2.4300 | Buy Now |
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DISTI #
STF5N62K3
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Avnet Americas | Trans MOSFET N-CH 620V 4.2A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: STF5N62K3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
511-STF5N62K3
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Mouser Electronics | MOSFETs N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3 RoHS: Compliant | 920 |
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$0.9980 / $2.3800 | Buy Now |
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STMicroelectronics | N-channel 620 V, 1.28 Ohm typ., 4.2 A MDmesh K3 Power MOSFET in a TO-220FP package COO: China RoHS: Compliant Min Qty: 1 | 920 |
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$1.0400 / $2.3300 | Buy Now |
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DISTI #
STF5N62K3
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$0.7700 / $2.0500 | RFQ |
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ComSIT USA | 620 V, 4.2 A, 1.28 OHM, TO-220FP SUPERMESH3 N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STF5N62K3
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Avnet Silica | Trans MOSFET NCH 620V 42A 3Pin3Tab TO220FP Tube (Alt: STF5N62K3) RoHS: Compliant Min Qty: 2000 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STF5N62K3
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EBV Elektronik | Trans MOSFET NCH 620V 42A 3Pin3Tab TO220FP Tube (Alt: STF5N62K3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STF5N62K3
STF5N62K3 CAD Models
STF5N62K3 Part Data Attributes
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STF5N62K3
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF5N62K3
STMicroelectronics
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220FP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | ULTRA LOW-ON RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 620 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 16.8 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STF5N62K3 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STF5N62K3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
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To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the device's gate-source voltage (Vgs) and drain-source voltage (Vds) ratings, as well as the recommended gate resistor value (Rg) to ensure stable operation.
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For optimal thermal management, use a PCB layout that provides good thermal conductivity and heat dissipation. This can include using thermal vias, heat sinks, and thermal interface materials. Additionally, ensure that the device is mounted correctly and that the thermal pad is properly connected to the PCB.
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To handle ESD protection, follow proper handling and storage procedures for the device. Use ESD-protective packaging and handling equipment, and ensure that the device is properly grounded during assembly and testing. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.
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The reliability and lifetime expectations for the STF5N62K3 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. Refer to the datasheet and relevant industry standards (e.g., JEDEC) for guidance on reliability and lifetime expectations. Additionally, consider performing accelerated life testing and reliability analysis to estimate the device's lifetime.