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Part Details for STF10N80K5 by STMicroelectronics
Results Overview of STF10N80K5 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STF10N80K5 Information
STF10N80K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF10N80K5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2807244
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Farnell | MOSFET, N-CH, 800V, 9A, TO-220FP RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each | 462 |
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$1.8400 / $2.1200 | Buy Now |
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DISTI #
497-15113-5-ND
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DigiKey | MOSFET N-CH 800V 9A TO220FP Min Qty: 1 Lead time: 14 Weeks Container: Tube |
793 In Stock |
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$1.3310 / $1.8500 | Buy Now |
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DISTI #
STF10N80K5
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Avnet Americas | Trans MOSFET N-CH 800V 9A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: STF10N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$1.2296 / $1.3075 | Buy Now |
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DISTI #
511-STF10N80K5
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Mouser Electronics | MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET RoHS: Compliant | 672 |
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$1.3000 / $1.7400 | Buy Now |
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STMicroelectronics | N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package RoHS: Compliant Min Qty: 1 | 662 |
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$1.3600 / $1.6800 | Buy Now |
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DISTI #
30609381
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Verical | Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 16 Package Multiple: 1 | Americas - 25 |
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$1.9354 | Buy Now |
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Bristol Electronics | 150 |
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RFQ | ||
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Quest Components | 120 |
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$2.2422 / $3.6360 | Buy Now | |
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ComSIT USA | N-CHANNEL 800 V, 0.470 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STF10N80K5
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Avnet Silica | Trans MOSFET NCH 800V 9A 3Pin TO220 FP Tube (Alt: STF10N80K5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days | Silica - 1000 |
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Buy Now |
Part Details for STF10N80K5
STF10N80K5 CAD Models
STF10N80K5 Part Data Attributes
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STF10N80K5
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF10N80K5
STMicroelectronics
N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 9 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Surface Mount | NO | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STF10N80K5 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STF10N80K5 is typically defined by the voltage and current ratings. The device can operate safely up to 800V and 10A, but the actual SOA depends on the specific application and thermal conditions.
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To ensure proper cooling, consider the thermal resistance of the package (Rth(j-a) = 2.5°C/W), the maximum junction temperature (Tj(max) = 150°C), and the power dissipation (Pd) of the device. Use a suitable heat sink, thermal interface material, and ensure good airflow to keep the junction temperature below the maximum rating.
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The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it may need to be adjusted based on the gate drive voltage, switching frequency, and parasitic inductance in the circuit.
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Yes, the STF10N80K5 is suitable for high-frequency switching applications up to several hundred kHz. However, consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit. Ensure proper layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
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Use a suitable overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, to prevent voltage spikes from damaging the device. Implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC to prevent excessive current from flowing through the device.