Part Details for STD8NM60ND by STMicroelectronics
Results Overview of STD8NM60ND by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD8NM60ND Information
STD8NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD8NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V79:2366_17778701
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Arrow Electronics | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1133 | Americas - 550 |
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$1.5438 | Buy Now |
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DISTI #
26112294
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 1133 | Americas - 550 |
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$1.5438 | Buy Now |
Part Details for STD8NM60ND
STD8NM60ND CAD Models
STD8NM60ND Part Data Attributes
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STD8NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD8NM60ND
STMicroelectronics
7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STD8NM60ND Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STD8NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 60V. Additionally, the device should be operated within the recommended temperature range of -40°C to 150°C.
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The maximum power dissipation of the STD8NM60ND is 110W, but this can be increased with proper heat sinking and thermal management.
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To protect the STD8NM60ND from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during assembly and testing.
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Yes, the STD8NM60ND is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its recommended specifications.