Part Details for STD8NM60N by STMicroelectronics
Results Overview of STD8NM60N by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD8NM60N Information
STD8NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD8NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | N-CHANNEL 600 V-0.56 OHM-7 A-DPAK SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for STD8NM60N
STD8NM60N CAD Models
STD8NM60N Part Data Attributes
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STD8NM60N
STMicroelectronics
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Datasheet
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STD8NM60N
STMicroelectronics
7A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD8NM60N
This table gives cross-reference parts and alternative options found for STD8NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD8NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STD8NM60N vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD8NM60N vs IRFS620 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STD8NM60N vs FQA17N40 |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STD8NM60N vs STD65N6F3 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD8NM60N vs FDP6035L |
| BUK465-60A | NXP Semiconductors | Check for Price | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | STD8NM60N vs BUK465-60A |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | STD8NM60N vs FQAF7N80 |
| FQB13N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | STD8NM60N vs FQB13N50 |
| FDP6644 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD8NM60N vs FDP6644 |
| IPB05N03L | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | STD8NM60N vs IPB05N03L |