-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for STD6NF10T4 by STMicroelectronics
Results Overview of STD6NF10T4 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD6NF10T4 Information
STD6NF10T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD6NF10T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
33R1170
|
Newark | Mosfet, N Channel, 100V, 6A, Dpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD6NF10T4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
497-7974-1-ND
|
DigiKey | MOSFET N-CH 100V 6A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1362 In Stock |
|
$0.3875 / $1.6100 | Buy Now |
|
DISTI #
STD6NF10T4
|
Avnet Americas | Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD6NF10T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
|
$0.3663 / $0.3895 | Buy Now |
|
|
STMicroelectronics | N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET RoHS: Compliant Min Qty: 1 | 320 |
|
$0.5200 / $1.3800 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-252AA | 650 |
|
$0.2625 / $0.5625 | Buy Now |
|
DISTI #
STD6NF10T4
|
TME | Transistor: N-MOSFET, unipolar, 100V, 4A, 30W, DPAK, ESD Min Qty: 1 | 0 |
|
$0.3090 / $0.5510 | RFQ |
|
DISTI #
STD6NF10T4
|
Avnet Silica | Trans MOSFET NCH 100V 6A 3Pin2Tab DPAK TR (Alt: STD6NF10T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
STD6NF10T4
|
EBV Elektronik | Trans MOSFET NCH 100V 6A 3Pin2Tab DPAK TR (Alt: STD6NF10T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
LCSC | 100V 6A 30W 250m10V3A 4V 1 N-channel DPAK MOSFETs ROHS | 2362 |
|
$0.4716 / $0.9213 | Buy Now |
Part Details for STD6NF10T4
STD6NF10T4 CAD Models
STD6NF10T4 Part Data Attributes
|
|
STD6NF10T4
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STD6NF10T4
STMicroelectronics
N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252AA | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | LOW THRESHOLD | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD6NF10T4
This table gives cross-reference parts and alternative options found for STD6NF10T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD6NF10T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.7578 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STD6NF10T4 vs STP4NK60Z |
| STP14NK50Z | STMicroelectronics | $1.0033 | N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET | STD6NF10T4 vs STP14NK50Z |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STD6NF10T4 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STD6NF10T4 vs IPB80N06S2LH5ATMA1 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STD6NF10T4 vs IPD90N06S306ATMA1 |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD6NF10T4 vs SSP10N60B |
| PHB65N06LT | NXP Semiconductors | Check for Price | 63A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN | STD6NF10T4 vs PHB65N06LT |
| NDD506A | National Semiconductor Corporation | Check for Price | TRANSISTOR 19 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power | STD6NF10T4 vs NDD506A |
| BUK762R0-40C | Nexperia | Check for Price | Power Field-Effect Transistor | STD6NF10T4 vs BUK762R0-40C |
| STD17N06L-1 | STMicroelectronics | Check for Price | 17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STD6NF10T4 vs STD17N06L-1 |
STD6NF10T4 Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the STD6NF10T4 is 100 MHz.
-
To ensure proper biasing, connect VCC to a stable 3.3V or 5V power supply, and connect VEE to a stable -5V or -3.3V power supply. Also, ensure that the input signals are within the recommended voltage range.
-
The recommended termination scheme for the STD6NF10T4 is a 50-ohm termination resistor in series with a 10-nF capacitor to ground on each output pin.
-
To handle heat dissipation, ensure good airflow around the device, and consider using a heat sink or thermal pad if the device is expected to operate at high temperatures or high frequencies.
-
The maximum power dissipation of the STD6NF10T4 is 1.5 W. Ensure that the device is operated within this limit to prevent overheating.