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Part Details for STD30NF06T4 by STMicroelectronics
Results Overview of STD30NF06T4 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD30NF06T4 Information
STD30NF06T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD30NF06T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33R1159
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Newark | Mosfet, N Channel, 60V, 28A, Dpak, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD30NF06T4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4574 |
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$0.7100 / $1.3000 | Buy Now |
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DISTI #
497-6562-1-ND
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DigiKey | MOSFET N-CH 60V 28A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4475 / $1.6400 | Buy Now |
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DISTI #
STD30NF06T4
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Avnet Americas | Trans MOSFET N-CH 60V 28A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD30NF06T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.3799 / $0.4039 | Buy Now |
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DISTI #
511-STD30NF06T4
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Mouser Electronics | MOSFETs N-channel 60 V RoHS: Compliant | 0 |
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$0.4190 / $1.2500 | Order Now |
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DISTI #
V72:2272_06559838
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Arrow Electronics | Trans MOSFET N-CH 60V 28A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2323 Container: Cut Strips | Americas - 267 |
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$0.4092 / $0.6135 | Buy Now |
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STMicroelectronics | N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET RoHS: Compliant Min Qty: 1 | 0 |
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$0.5400 / $1.2300 | Buy Now |
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DISTI #
69730592
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Verical | Trans MOSFET N-CH 60V 28A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 15 Package Multiple: 1 Date Code: 2323 | Americas - 267 |
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$0.4092 / $0.5436 | Buy Now |
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Bristol Electronics | 1212 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 60V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 1520 |
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$0.6556 / $1.8730 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 28A I(D), 60V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 969 |
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$1.4100 / $3.7600 | Buy Now |
Part Details for STD30NF06T4
STD30NF06T4 CAD Models
STD30NF06T4 Part Data Attributes
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STD30NF06T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD30NF06T4
STMicroelectronics
N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD30NF06T4
This table gives cross-reference parts and alternative options found for STD30NF06T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD30NF06T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STD30NF06T4 vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD30NF06T4 vs IRFS620 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | STD30NF06T4 vs FQA17N40 |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | STD30NF06T4 vs STD65N6F3 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD30NF06T4 vs FDP6035L |
| BUK465-60A | NXP Semiconductors | Check for Price | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | STD30NF06T4 vs BUK465-60A |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | STD30NF06T4 vs FQAF7N80 |
| FQB13N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | STD30NF06T4 vs FQB13N50 |
| FDP6644 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD30NF06T4 vs FDP6644 |
| IPB05N03L | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | STD30NF06T4 vs IPB05N03L |
STD30NF06T4 Frequently Asked Questions (FAQ)
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The maximum junction temperature that the STD30NF06T4 can withstand is 150°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the PCB should be designed to allow for good airflow and heat dissipation.
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The recommended gate resistor value for the STD30NF06T4 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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Yes, the STD30NF06T4 is suitable for high-reliability applications due to its robust design and manufacturing process. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
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To protect the STD30NF06T4 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper handling and assembly procedures.