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N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD16N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7534
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Newark | Mosfet, N-Ch, 600V, 12A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD16N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2883 |
|
$0.9530 / $1.6000 | Buy Now |
DISTI #
497-15461-1-ND
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DigiKey | MOSFET N-CH 600V 12A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4612 In Stock |
|
$0.5655 / $1.1000 | Buy Now |
DISTI #
STD16N60M2
|
Avnet Americas | Trans MOSFET N-CH 600V 12A 3-Pin DPAK T/R - Tape and Reel (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.5298 / $0.5633 | Buy Now |
DISTI #
511-STD16N60M2
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Mouser Electronics | MOSFETs N-channel 600 V, 0.28 Ohm typ 12 A MDmesh M2 Power MOSFET in DPAK package RoHS: Compliant | 9452 |
|
$0.5770 / $1.0600 | Buy Now |
DISTI #
E02:0323_09716561
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Arrow Electronics | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Date Code: 2512 | Europe - 2500 |
|
$0.5729 | Buy Now |
DISTI #
V72:2272_13796645
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Arrow Electronics | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2342 Container: Cut Strips | Americas - 2300 |
|
$0.5707 / $0.5930 | Buy Now |
|
STMicroelectronics | N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 9442 |
|
$0.6300 / $0.9400 | Buy Now |
DISTI #
88087406
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Verical | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2512 | Americas - 2500 |
|
$0.5761 | Buy Now |
DISTI #
STD16N60M2
|
Avnet Silica | Trans MOSFET NCH 600V 12A 3Pin DPAK TR (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | Silica - 12500 |
|
Buy Now | |
DISTI #
STD16N60M2
|
EBV Elektronik | Trans MOSFET NCH 600V 12A 3Pin DPAK TR (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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STD16N60M2
STMicroelectronics
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Datasheet
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STD16N60M2
STMicroelectronics
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 12 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Surface Mount | YES | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
The maximum operating frequency of the STD16N60M2 is typically around 100 kHz, but it can be used up to 200 kHz with proper design and layout considerations.
To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability and a low output impedance.
To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use a thermal pad or heat sink for the device. Also, keep the gate drive circuitry close to the device and use a shielded cable for the gate signal.
Use a voltage clamp or a TVS diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.
For high-power applications, a heat sink with a thermal resistance of <1°C/W is recommended. Additionally, consider using a fan or a liquid cooling system to further reduce the junction temperature.