Datasheets
STD16N60M2 by: STMicroelectronics

N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package

Part Details for STD16N60M2 by STMicroelectronics

Results Overview of STD16N60M2 by STMicroelectronics

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Applications Industrial Automation Electronic Manufacturing

STD16N60M2 Information

STD16N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD16N60M2

Part # Distributor Description Stock Price Buy
DISTI # 45AC7534
Newark Mosfet, N-Ch, 600V, 12A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD16N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2883
  • 1 $1.6000
  • 10 $1.3100
  • 25 $1.3000
  • 50 $1.2200
  • 100 $1.1300
  • 250 $1.1200
  • 500 $1.0300
  • 1,000 $0.9530
$0.9530 / $1.6000 Buy Now
DISTI # 497-15461-1-ND
DigiKey MOSFET N-CH 600V 12A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4612
In Stock
  • 1 $1.1000
  • 10 $0.8620
  • 100 $0.7313
  • 500 $0.6884
  • 1,000 $0.6808
  • 2,500 $0.5906
  • 5,000 $0.5655
$0.5655 / $1.1000 Buy Now
DISTI # STD16N60M2
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin DPAK T/R - Tape and Reel (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5633
  • 5,000 $0.5597
  • 10,000 $0.5494
  • 15,000 $0.5394
  • 20,000 $0.5298
$0.5298 / $0.5633 Buy Now
DISTI # 511-STD16N60M2
Mouser Electronics MOSFETs N-channel 600 V, 0.28 Ohm typ 12 A MDmesh M2 Power MOSFET in DPAK package RoHS: Compliant 9452
  • 1 $1.0600
  • 10 $0.8330
  • 25 $0.8300
  • 100 $0.7090
  • 250 $0.7060
  • 500 $0.6490
  • 1,000 $0.6160
  • 2,500 $0.5790
  • 5,000 $0.5770
$0.5770 / $1.0600 Buy Now
DISTI # E02:0323_09716561
Arrow Electronics Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks Date Code: 2512 Europe - 2500
  • 2,500 $0.5729
$0.5729 Buy Now
DISTI # V72:2272_13796645
Arrow Electronics Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2342 Container: Cut Strips Americas - 2300
  • 1 $0.5930
  • 10 $0.5892
  • 25 $0.5855
  • 100 $0.5818
  • 250 $0.5781
  • 500 $0.5744
  • 1,000 $0.5707
$0.5707 / $0.5930 Buy Now
STMicroelectronics N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 9442
  • 1 $0.9400
  • 10 $0.7700
  • 25 $0.7700
  • 100 $0.6800
  • 250 $0.6800
  • 500 $0.6300
$0.6300 / $0.9400 Buy Now
DISTI # 88087406
Verical Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2512 Americas - 2500
  • 2,500 $0.5761
$0.5761 Buy Now
DISTI # STD16N60M2
Avnet Silica Trans MOSFET NCH 600V 12A 3Pin DPAK TR (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Silica - 12500
Buy Now
DISTI # STD16N60M2
EBV Elektronik Trans MOSFET NCH 600V 12A 3Pin DPAK TR (Alt: STD16N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 12A 110W 320m10V6A 2V 1 N-channel DPAK MOSFETs ROHS 10
  • 1 $2.1582
  • 10 $1.8414
  • 30 $1.6434
  • 100 $1.4409
  • 500 $1.3495
  • 1,000 $1.3099
$1.3099 / $2.1582 Buy Now

Part Details for STD16N60M2

STD16N60M2 CAD Models

STD16N60M2 Part Data Attributes

STD16N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD16N60M2 STMicroelectronics N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STD16N60M2 Related Parts

STD16N60M2 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STD16N60M2 is typically around 100 kHz, but it can be used up to 200 kHz with proper design and layout considerations.

  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability and a low output impedance.

  • To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use a thermal pad or heat sink for the device. Also, keep the gate drive circuitry close to the device and use a shielded cable for the gate signal.

  • Use a voltage clamp or a TVS diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

  • For high-power applications, a heat sink with a thermal resistance of <1°C/W is recommended. Additionally, consider using a fan or a liquid cooling system to further reduce the junction temperature.

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