Part Details for STD10PF06T4 by STMicroelectronics
Results Overview of STD10PF06T4 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD10PF06T4 Information
STD10PF06T4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD10PF06T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89K1543
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Newark | P Channel Mosfet, -60V, 10A, D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD10PF06T4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Bristol Electronics | 3333 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 10 |
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$2.2500 / $3.0000 | Buy Now |
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Quest Components | 10 A, 60 V, 0.2 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 8 |
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$2.5000 / $4.0000 | Buy Now |
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ComSIT USA | P-CHANNEL 60V-0.18 OHM-10A DPAK STRIPFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STD10PF06T4
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EBV Elektronik | Trans MOSFET PCH 60V 10A 3Pin2Tab DPAK TR (Alt: STD10PF06T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 1555 |
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RFQ | |
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Win Source Electronics | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V 10A DPAK | 36997 |
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$1.6683 / $2.5024 | Buy Now |
Part Details for STD10PF06T4
STD10PF06T4 CAD Models
STD10PF06T4 Part Data Attributes
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STD10PF06T4
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD10PF06T4
STMicroelectronics
P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252AA | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD10PF06T4
This table gives cross-reference parts and alternative options found for STD10PF06T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10PF06T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| SFR9024 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 | STD10PF06T4 vs SFR9024 |
| FQD7P06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | STD10PF06T4 vs FQD7P06 |
| RFD8P06ESM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD10PF06T4 vs RFD8P06ESM |
| RF1S9640SM | Rochester Electronics LLC | Check for Price | 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | STD10PF06T4 vs RF1S9640SM |
| SPD08P06PG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN | STD10PF06T4 vs SPD08P06PG |
| SFW2955 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | STD10PF06T4 vs SFW2955 |
| SFW9Z24 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 | STD10PF06T4 vs SFW9Z24 |
| RFD8P05SM | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STD10PF06T4 vs RFD8P05SM |
| RFD8P05SM | Intersil Corporation | Check for Price | 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | STD10PF06T4 vs RFD8P05SM |
| RFD8P05SM9A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | STD10PF06T4 vs RFD8P05SM9A |
STD10PF06T4 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STD10PF06T4 is -40°C to 125°C.
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To ensure proper biasing, connect VCC to a stable 3.3V or 5V power supply, and connect VEE to ground. Also, ensure that the input signals are within the recommended voltage range.
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The maximum current rating for the STD10PF06T4 is 10mA per channel.
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To handle ESD protection, ensure that the device is handled in an ESD-protected environment, and use ESD-protective packaging and handling procedures.
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For optimal performance, use a 4-layer PCB with a solid ground plane, and keep the signal traces short and away from noise sources.