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Transistors / Power Field-Effect Transistors / STB8N65M5
Datasheets
STB8N65M5 by: STMicroelectronics

N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package

Part Details for STB8N65M5 by STMicroelectronics

Results Overview of STB8N65M5 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

STB8N65M5 Information

STB8N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB8N65M5

Part # Distributor Description Stock Price Buy
DISTI # 497-10875-1-ND
DigiKey MOSFET N-CH 650V 7A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $3.2800
  • 10 $2.4460
  • 100 $1.7121
  • 500 $1.5110
  • 1,000 $1.2982
  • 2,000 $1.2345
$1.2345 / $3.2800 Buy Now
DISTI # STB8N65M5
Avnet Americas Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB8N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.2501
  • 2,000 $1.2423
  • 4,000 $1.2193
  • 6,000 $1.1971
  • 8,000 $1.1757
$1.1757 / $1.2501 Buy Now
DISTI # 511-STB8N65M5
Mouser Electronics MOSFETs MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A RoHS: Compliant 217
  • 1 $3.2200
  • 10 $2.4500
  • 100 $1.7200
  • 500 $1.4000
  • 1,000 $1.2900
  • 2,000 $1.2300
$1.2300 / $3.2200 Buy Now
DISTI # 70390702
RS STB8N65M5 N-channel MOSFET Transistor, 7 A, 650 V, 2+Tab-Pin TO-263 Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.7100
$1.7100 RFQ
STMicroelectronics N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 1217
  • 1 $3.2500
  • 10 $2.4000
  • 25 $2.4000
  • 100 $1.6900
  • 250 $1.6900
  • 500 $1.4200
$1.4200 / $3.2500 Buy Now
Bristol Electronics   426
RFQ
Quest Components   340
  • 1 $3.1320
  • 34 $2.0880
  • 121 $1.9314
$1.9314 / $3.1320 Buy Now
DISTI # STB8N65M5
TME Transistor: N-MOSFET, unipolar, 650V, 4.4A, 70W, D2PAK, ESD Min Qty: 1 15
  • 1 $2.6700
  • 5 $2.3100
  • 25 $1.9400
$1.9400 / $2.6700 Buy Now
DISTI # STB8N65M5
Avnet Silica Trans MOSFET NCH 650V 7A 3Pin2Tab D2PAK TR (Alt: STB8N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Silica - 4000
Buy Now
DISTI # STB8N65M5
EBV Elektronik Trans MOSFET NCH 650V 7A 3Pin2Tab D2PAK TR (Alt: STB8N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 832
RFQ

Part Details for STB8N65M5

STB8N65M5 Part Data Attributes

Parametric Data
STB8N65M5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB8N65M5 STMicroelectronics N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB8N65M5

This table gives cross-reference parts and alternative options found for STB8N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB8N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIHB6N65E-GE3 Vishay Intertechnologies $1.3085 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 STB8N65M5 vs SIHB6N65E-GE3
LSH07N70 Xi’an Lonten Renewable Energy Technology Inc Check for Price Power Field-Effect Transistor, 7A I(D), 700V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, STB8N65M5 vs LSH07N70
LSG07N70 Xi’an Lonten Renewable Energy Technology Inc Check for Price Power Field-Effect Transistor, 7A I(D), 700V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, STB8N65M5 vs LSG07N70

STB8N65M5 Related Parts

STB8N65M5 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STB8N65M5 is 100 kHz, but it can be operated at higher frequencies with reduced performance.

  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the layout guidelines provided in the datasheet.

  • The maximum input voltage that the STB8N65M5 can handle is 65V, but it is recommended to operate within the specified input voltage range of 8-60V for optimal performance.

  • The STB8N65M5 has built-in overcurrent protection and thermal shutdown, but it is still recommended to add external protection circuits and to follow proper thermal design guidelines to ensure reliable operation.

  • Yes, the STB8N65M5 can operate in high-temperature environments up to 150°C, but the maximum operating temperature may vary depending on the specific application and operating conditions.

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