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Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB43N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
04AJ4703
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Newark | Mosfet, N-Ch, 650V, 42A, To263, Transistor Polarity:N Channel, Continuous Drain Current Id:42A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STB43N65M5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$7.5900 / $11.6700 | Buy Now |
DISTI #
497-16299-1-ND
|
DigiKey | MOSFET N-CH 650V 42A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1790 In Stock |
|
$4.7274 / $9.0200 | Buy Now |
DISTI #
STB43N65M5
|
Avnet Americas | POWER MOSFET - Tape and Reel (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$4.5023 / $4.7872 | Buy Now |
DISTI #
STB43N65M5
|
Avnet Americas | POWER MOSFET - Tape and Reel (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$4.7274 / $5.0488 | Buy Now |
DISTI #
511-STB43N65M5
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Mouser Electronics | MOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ 42 A MDmesh M5 Power MOSFET RoHS: Compliant | 1375 |
|
$4.7200 / $8.8400 | Buy Now |
|
STMicroelectronics | Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 1225 |
|
$5.1000 / $8.6600 | Buy Now |
DISTI #
76445486
|
Verical | Trans MOSFET N-CH 650V 42A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2351 | Americas - 2000 |
|
$4.8500 | Buy Now |
DISTI #
87896199
|
Verical | Trans MOSFET N-CH 650V 42A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2429 | Americas - 1000 |
|
$5.0286 | Buy Now |
|
Future Electronics | STB43N65M5 Series 650 V 63 mOhm 42 A N-Channel MDmesh� M5 Power MOSFET - D�PAK-3 Min Qty: 1000 Package Multiple: 1000 |
1000 null |
|
$4.8600 | Buy Now |
DISTI #
STB43N65M5
|
TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
|
$6.1300 / $9.9100 | RFQ |
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STB43N65M5
STMicroelectronics
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Datasheet
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STB43N65M5
STMicroelectronics
Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 650 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.063 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 168 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the STB43N65M5 is -40°C to 150°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.
The maximum current rating for the STB43N65M5 is 43A.
Use a voltage regulator to regulate the voltage supply, and consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges.
Use a multi-layer PCB with a solid ground plane, and keep the power traces short and wide to minimize inductance and resistance. Consult the datasheet for specific layout recommendations.