Datasheets
STB43N65M5 by: STMicroelectronics

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package

Part Details for STB43N65M5 by STMicroelectronics

Results Overview of STB43N65M5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STB43N65M5 Information

STB43N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB43N65M5

Part # Distributor Description Stock Price Buy
DISTI # 04AJ4703
Newark Mosfet, N-Ch, 650V, 42A, To263, Transistor Polarity:N Channel, Continuous Drain Current Id:42A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STB43N65M5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $11.6700
  • 10 $9.2500
  • 25 $8.8100
  • 50 $8.4600
  • 100 $8.1700
  • 250 $7.9100
  • 500 $7.7400
  • 1,000 $7.5900
$7.5900 / $11.6700 Buy Now
DISTI # 497-16299-1-ND
DigiKey MOSFET N-CH 650V 42A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1790
In Stock
  • 1 $9.0200
  • 10 $6.5480
  • 100 $5.7863
  • 1,000 $4.7274
$4.7274 / $9.0200 Buy Now
DISTI # STB43N65M5
Avnet Americas POWER MOSFET - Tape and Reel (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,000 $4.7872
  • 2,000 $4.7571
  • 4,000 $4.6690
  • 6,000 $4.5841
  • 8,000 $4.5023
$4.5023 / $4.7872 Buy Now
DISTI # STB43N65M5
Avnet Americas POWER MOSFET - Tape and Reel (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 1,000 $5.0488
  • 2,000 $4.9543
  • 4,000 $4.8787
  • 6,000 $4.8030
  • 8,000 $4.7274
$4.7274 / $5.0488 Buy Now
DISTI # 511-STB43N65M5
Mouser Electronics MOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ 42 A MDmesh M5 Power MOSFET RoHS: Compliant 1375
  • 1 $8.8400
  • 10 $6.4200
  • 100 $5.0700
  • 500 $4.7300
  • 1,000 $4.7200
$4.7200 / $8.8400 Buy Now
STMicroelectronics Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 1225
  • 1 $8.6600
  • 10 $6.2900
  • 25 $6.2900
  • 100 $5.2800
  • 250 $5.2800
  • 500 $5.1000
$5.1000 / $8.6600 Buy Now
DISTI # 76445486
Verical Trans MOSFET N-CH 650V 42A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2351 Americas - 2000
  • 1,000 $4.8500
$4.8500 Buy Now
DISTI # 87896199
Verical Trans MOSFET N-CH 650V 42A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2429 Americas - 1000
  • 1,000 $5.0286
$5.0286 Buy Now
Future Electronics STB43N65M5 Series 650 V 63 mOhm 42 A N-Channel MDmesh� M5 Power MOSFET - D�PAK-3 Min Qty: 1000 Package Multiple: 1000 1000
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  • 1,000 $4.8600
$4.8600 Buy Now
DISTI # STB43N65M5
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $9.9100
  • 10 $8.9200
  • 25 $8.2600
  • 100 $7.8800
  • 250 $7.0800
  • 500 $6.6100
  • 1,000 $6.1300
$6.1300 / $9.9100 RFQ
DISTI # STB43N65M5
Avnet Silica POWER MOSFET (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Silica - 7000
Buy Now
DISTI # STB43N65M5
EBV Elektronik POWER MOSFET (Alt: STB43N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 650V 42A 250W 63m10V21A 4V 1 N-channel D2PAK MOSFETs ROHS 5
  • 1 $9.1337
  • 10 $8.9330
  • 30 $8.7987
  • 100 $8.6644
$8.6644 / $9.1337 Buy Now
Vyrian Transistors 2098
RFQ

Part Details for STB43N65M5

STB43N65M5 CAD Models

STB43N65M5 Part Data Attributes

STB43N65M5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB43N65M5 STMicroelectronics Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 650 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 168 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STB43N65M5 Related Parts

STB43N65M5 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STB43N65M5 is -40°C to 150°C.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.

  • The maximum current rating for the STB43N65M5 is 43A.

  • Use a voltage regulator to regulate the voltage supply, and consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges.

  • Use a multi-layer PCB with a solid ground plane, and keep the power traces short and wide to minimize inductance and resistance. Consult the datasheet for specific layout recommendations.

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