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N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB42N60M2-EP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69AH2675
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Newark | Mosfet, N-Ch, 600V, 34A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STB42N60M2-EP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 905 |
|
$3.7200 / $4.4000 | Buy Now |
DISTI #
497-15896-1-ND
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DigiKey | MOSFET N-CH 600V 34A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
388 In Stock |
|
$2.8083 / $6.1300 | Buy Now |
DISTI #
69AH2675
|
Avnet Americas | Trans MOSFET N-CH 650V 34A 3-Pin D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 69AH2675) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 745 Partner Stock |
|
$4.2500 / $7.0200 | Buy Now |
DISTI #
STB42N60M2-EP
|
Avnet Americas | Trans MOSFET N-CH 650V 34A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB42N60M2-EP) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$2.6745 / $2.8438 | Buy Now |
DISTI #
511-STB42N60M2-EP
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Mouser Electronics | MOSFETs N-channel 600 V, 0.076 Ohm typ 34 A MDmesh M2 EP Power MOSFET RoHS: Compliant | 284 |
|
$2.8000 / $6.0100 | Buy Now |
DISTI #
V36:1790_13796638
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Arrow Electronics | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Date Code: 2427 | Americas - 2000 |
|
$2.7940 | Buy Now |
DISTI #
E02:0323_08681506
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Arrow Electronics | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Date Code: 2435 | Europe - 1000 |
|
$3.0989 | Buy Now |
|
STMicroelectronics | N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 1284 |
|
$2.8700 / $5.9300 | Buy Now |
DISTI #
88865753
|
Verical | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 | Americas - 2000 |
|
$2.7940 | Buy Now |
DISTI #
34240515
|
Verical | Trans MOSFET N-CH 600V 34A 3-Pin(2+Tab) D2PAK T/R Min Qty: 10 Package Multiple: 1 | Americas - 1000 |
|
$2.8000 / $4.0300 | Buy Now |
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STB42N60M2-EP
STMicroelectronics
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Datasheet
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STB42N60M2-EP
STMicroelectronics
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | BULK: 1000 | |
Avalanche Energy Rating (Eas) | 800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.087 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.5 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature of the STB42N60M2-EP is 150°C.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
The maximum current rating of the STB42N60M2-EP is 42A, but this can be derated based on the operating temperature and other factors.
To protect the STB42N60M2-EP from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage to the maximum rated voltage of 600V.
The recommended gate drive voltage for the STB42N60M2-EP is between 10V and 15V, with a maximum gate-source voltage of ±20V.