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N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB30NF20 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-7946-1-ND
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DigiKey | MOSFET N-CH 200V 30A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1753 In Stock |
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$0.9942 / $3.1900 | Buy Now |
DISTI #
STB30NF20
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Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB30NF20) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 1000 |
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$0.9469 / $1.0068 | Buy Now |
DISTI #
511-STB30NF20
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Mouser Electronics | MOSFETs N Ch 1500V 2.5A Pwr MOSFET RoHS: Compliant | 1014 |
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$0.9940 / $3.1900 | Buy Now |
DISTI #
E02:0323_07045695
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Arrow Electronics | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2431 | Europe - 1000 |
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$0.9481 / $0.9902 | Buy Now |
DISTI #
70547883
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RS | STB30NF20 N-channel MOSFET Transistor, 30 A, 200 V, 3-Pin D2PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$2.2800 / $2.6900 | RFQ |
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STMicroelectronics | N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET RoHS: Compliant Min Qty: 1 | 1014 |
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$1.1500 / $3.1300 | Buy Now |
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Future Electronics | N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 4000Reel |
|
$1.1500 / $1.1700 | Buy Now |
DISTI #
84420939
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Verical | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2431 | Americas - 1000 |
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$0.9502 / $0.9923 | Buy Now |
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Future Electronics | N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK Min Qty: 1000 Package Multiple: 1000 |
4000 null |
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$1.1500 / $1.1700 | Buy Now |
DISTI #
STB30NF20
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Avnet Silica | Trans MOSFET NCH 200V 30A 3Pin2Tab D2PAK TR (Alt: STB30NF20) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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STB30NF20
STMicroelectronics
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Datasheet
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STB30NF20
STMicroelectronics
N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STB30NF20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB30NF20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STP30NF20 | STMicroelectronics | $1.6590 | N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET | STB30NF20 vs STP30NF20 |
STP30N20 | STMicroelectronics | Check for Price | 30A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STB30NF20 vs STP30N20 |
SFF250Z-1 | Solid State Devices Inc (SSDI) | Check for Price | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN | STB30NF20 vs SFF250Z-1 |
The maximum operating temperature range for the STB30NF20 is -55°C to 150°C.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is Vgs = 10V, Vds = 20V, and Id = 10A.
The maximum current rating for the STB30NF20 is 30A.
To protect the STB30NF20 from overvoltage and overcurrent, use a voltage regulator to limit the voltage to the recommended maximum, and use a current limiter or fuse to prevent excessive current.
The thermal resistance of the STB30NF20 is Rth(j-a) = 40°C/W and Rth(j-c) = 10°C/W.