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Transistors / Power Field-Effect Transistors / STB25NM60ND
Datasheets
STB25NM60ND by: STMicroelectronics

N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

Part Details for STB25NM60ND by STMicroelectronics

Results Overview of STB25NM60ND by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

STB25NM60ND Information

STB25NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB25NM60ND

Part # Distributor Description Stock Price Buy
DISTI # 70390665
RS STB25NM60ND N-channel MOSFET Transistor, 21 A, 600 V, 2+Tab-Pin TO-263 Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $4.3500
  • 100 $3.7800
  • 200 $3.4000
  • 500 $3.1200
$3.1200 / $4.3500 RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 100
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STB25NM60ND
Avnet Silica Trans MOSFET NCH 600V 21A 3Pin2Tab D2PAK TR (Alt: STB25NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STB25NM60ND
EBV Elektronik Trans MOSFET NCH 600V 21A 3Pin2Tab D2PAK TR (Alt: STB25NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STB25NM60ND

STB25NM60ND Part Data Attributes

Parametric Data
STB25NM60ND STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB25NM60ND STMicroelectronics N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 850 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB25NM60ND

This table gives cross-reference parts and alternative options found for STB25NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB25NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCB20N60FTM onsemi $4.0640 Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL STB25NM60ND vs FCB20N60FTM
STB25NM60NT4 STMicroelectronics Check for Price 20A, 600V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STB25NM60ND vs STB25NM60NT4
APT20N60SCF Microsemi Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 STB25NM60ND vs APT20N60SCF
APT20N60SC3 Microsemi Corporation Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 STB25NM60ND vs APT20N60SC3
APT20N60SCFG Microsemi Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 STB25NM60ND vs APT20N60SCFG
STB23NM60ND STMicroelectronics Check for Price N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK STB25NM60ND vs STB23NM60ND
STB28N60DM2 STMicroelectronics Check for Price N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package STB25NM60ND vs STB28N60DM2
LSD20N65 Xi’an Lonten Renewable Energy Technology Inc Check for Price Power Field-Effect Transistor, 20A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN STB25NM60ND vs LSD20N65
STB26NM60N STMicroelectronics Check for Price N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in D2PAK package STB25NM60ND vs STB26NM60N
STB26NM60NTRL STMicroelectronics Check for Price 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STB25NM60ND vs STB26NM60NTRL

STB25NM60ND Related Parts

STB25NM60ND Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STB25NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.

  • To ensure reliability in high-temperature applications, it is essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and derating the device according to the temperature rating.

  • The recommended gate drive voltage for the STB25NM60ND is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.

  • Yes, the STB25NM60ND is suitable for switching applications with high dv/dt, but it's essential to ensure that the device is properly snubbed and that the gate drive is optimized to minimize oscillations and ringing.

  • To protect the STB25NM60ND from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) in combination with a fuse or a current limiter.

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