Datasheets
STB25NF06AG by: STMicroelectronics

Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package

Part Details for STB25NF06AG by STMicroelectronics

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STB25NF06AG Information

STB25NF06AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB25NF06AG

Part # Distributor Description Stock Price Buy
DISTI # STB25NF06AG
Avnet Americas Trans MOSFET N-CH 60V 19A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
STMicroelectronics Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 1498
  • 1 $1.2700
  • 10 $1.0500
  • 100 $1.0500
  • 500 $1.0400
$1.0400 / $1.2700 Buy Now
Future Electronics N-Channel 60 V 0.07 Ohm 14.1 nC Automotive STripFET II Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 2000
Reel
  • 1,000 $0.4200
  • 2,000 $0.4150
  • 3,000 $0.4100
  • 5,000 $0.4000
$0.4000 / $0.4200 Buy Now
Future Electronics N-Channel 60 V 0.07 Ohm 14.1 nC Automotive STripFET II Power Mosfet - D2PAK Min Qty: 1000 Package Multiple: 1000 2000
null
  • 1,000 $0.4200
  • 2,000 $0.4150
  • 3,000 $0.4100
  • 5,000 $0.4000
$0.4000 / $0.4200 Buy Now
DISTI # STB25NF06AG
Avnet Silica Trans MOSFET NCH 60V 19A 3Pin D2PAK TR (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STB25NF06AG
EBV Elektronik Trans MOSFET NCH 60V 19A 3Pin D2PAK TR (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STB25NF06AG

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STB25NF06AG Part Data Attributes

STB25NF06AG STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB25NF06AG STMicroelectronics Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

STB25NF06AG Related Parts

STB25NF06AG Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) of the STB25NF06AG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To calculate the power dissipation of the STB25NF06AG, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (RthJA). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

  • The recommended gate drive voltage for the STB25NF06AG is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide damage.

  • Yes, the STB25NF06AG is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the switching losses, gate charge, and thermal management to ensure reliable operation. It's recommended to use a suitable gate driver and to optimize the PCB layout to minimize the parasitic inductance and capacitance.

  • To protect the STB25NF06AG from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's recommended to use a voltage clamp or a TVS diode to limit the voltage across the device, and a current sense resistor or a current limiter to prevent overcurrent conditions.

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