Part Details for STB25NF06AG by STMicroelectronics
Results Overview of STB25NF06AG by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STB25NF06AG Information
STB25NF06AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB25NF06AG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STB25NF06AG
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Avnet Americas | Trans MOSFET N-CH 60V 19A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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STMicroelectronics | Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 1498 |
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$1.0400 / $1.2700 | Buy Now |
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Future Electronics | N-Channel 60 V 0.07 Ohm 14.1 nC Automotive STripFET II Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 2000Reel |
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$0.4000 / $0.4200 | Buy Now |
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Future Electronics | N-Channel 60 V 0.07 Ohm 14.1 nC Automotive STripFET II Power Mosfet - D2PAK Min Qty: 1000 Package Multiple: 1000 |
2000 null |
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$0.4000 / $0.4200 | Buy Now |
DISTI #
STB25NF06AG
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Avnet Silica | Trans MOSFET NCH 60V 19A 3Pin D2PAK TR (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STB25NF06AG
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EBV Elektronik | Trans MOSFET NCH 60V 19A 3Pin D2PAK TR (Alt: STB25NF06AG) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STB25NF06AG
STB25NF06AG CAD Models
STB25NF06AG Part Data Attributes
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STB25NF06AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB25NF06AG
STMicroelectronics
Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
STB25NF06AG Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the STB25NF06AG is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the STB25NF06AG, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (RthJA). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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The recommended gate drive voltage for the STB25NF06AG is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide damage.
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Yes, the STB25NF06AG is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the switching losses, gate charge, and thermal management to ensure reliable operation. It's recommended to use a suitable gate driver and to optimize the PCB layout to minimize the parasitic inductance and capacitance.
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To protect the STB25NF06AG from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's recommended to use a voltage clamp or a TVS diode to limit the voltage across the device, and a current sense resistor or a current limiter to prevent overcurrent conditions.