Part Details for STB18NM60ND by STMicroelectronics
Results Overview of STB18NM60ND by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STB18NM60ND Information
STB18NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB18NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
511-STB18NM60ND
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Mouser Electronics | MOSFETs N-CH 600V 0.25Ohm 13A FDmesh II RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
70520569
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RS | STB18NM60ND N-channel MOSFET Transistor, 13 A, 600 V, 3-Pin D2PAK Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.3000 / $1.5300 | RFQ |
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Bristol Electronics | 5 |
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RFQ | ||
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DISTI #
STB18NM60ND
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Avnet Silica | Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 43 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | 996 |
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RFQ | ||
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DISTI #
STB18NM60ND
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EBV Elektronik | Trans MOSFET NCH 600V 13A 3Pin D2PAK TR (Alt: STB18NM60ND) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STB18NM60ND
STB18NM60ND CAD Models
STB18NM60ND Part Data Attributes
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STB18NM60ND
STMicroelectronics
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Datasheet
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STB18NM60ND
STMicroelectronics
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 187 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STB18NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB18NM60ND is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and avoiding thermal hotspots.
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The maximum current rating for the STB18NM60ND is 18A, but it's essential to consider the device's thermal limitations and ensure proper cooling to avoid overheating.
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To protect the STB18NM60ND from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and ensure that your manufacturing process includes ESD protection measures.
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Yes, the STB18NM60ND is suitable for high-frequency switching applications, but it's essential to consider the device's switching characteristics, including rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).