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Part Details for STB18NF30 by STMicroelectronics
Results Overview of STB18NF30 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB18NF30 Information
STB18NF30 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB18NF30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12970-1-ND
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DigiKey | MOSFET N-CH 330V 18A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
616 In Stock |
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$1.0770 / $3.1000 | Buy Now |
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DISTI #
STB18NF30
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Avnet Americas | Trans MOSFET N-CH 330V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB18NF30) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.0379 / $1.0989 | Buy Now |
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DISTI #
511-STB18NF30
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Mouser Electronics | MOSFETs N-Ch 330V 18A MOS STripFET II D2PAK RoHS: Compliant | 534 |
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$1.0700 / $3.0700 | Buy Now |
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STMicroelectronics | Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 | 534 |
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$1.2300 / $3.0100 | Buy Now |
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DISTI #
STB18NF30
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IBS Electronics | N-CHANNEL 330 V 180 MOHM SURFACE MOUNT POWER MOSFET - D2PAK Min Qty: 1000 Package Multiple: 1 | 0 |
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$1.6250 / $1.6510 | Buy Now |
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DISTI #
STB18NF30
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Avnet Silica | Trans MOSFET NCH 330V 18A 3Pin2Tab D2PAK TR (Alt: STB18NF30) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STB18NF30
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EBV Elektronik | Trans MOSFET NCH 330V 18A 3Pin2Tab D2PAK TR (Alt: STB18NF30) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 330V 18A 160m10V9A 150W 2V 1 N-channel D2PAK MOSFETs ROHS | 971 |
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$1.2402 / $2.0519 | Buy Now |
Part Details for STB18NF30
STB18NF30 CAD Models
STB18NF30 Part Data Attributes
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STB18NF30
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB18NF30
STMicroelectronics
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET II Power MOSFET in a D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 245 | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
STB18NF30 Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the STB18NF30 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the STB18NF30, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds x Id) + (Vgs x Igs), where Vds is the drain-source voltage, Id is the drain current, Vgs is the gate-source voltage, and Igs is the gate current.
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To minimize EMI and thermal issues, it's recommended to follow a good PCB layout practice for the STB18NF30. This includes keeping the drain and source pins as close as possible to the heat sink, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a Kelvin connection for the source pin to reduce the inductance and improve the thermal performance.
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Yes, the STB18NF30 can be used in high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive requirements. Additionally, the PCB layout and the selection of the gate driver and other components should be optimized for high-frequency operation.
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To protect the STB18NF30 from overvoltage and overcurrent, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit the current flowing through the device. It's also essential to follow the recommended operating conditions and to design the application with sufficient margin to prevent overvoltage and overcurrent conditions.