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Part Details for STB141NF55 by STMicroelectronics
Results Overview of STB141NF55 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STB141NF55 Information
STB141NF55 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB141NF55
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STB141NF55-ND
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DigiKey | MOSFET N-CH 55V 80A D2PAK Min Qty: 1000 Lead time: 13 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.3362 / $1.3900 | Buy Now |
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DISTI #
STB141NF55
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB141NF55) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.2962 / $1.3761 | Buy Now |
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DISTI #
511-STB141NF55
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Mouser Electronics | MOSFETs N-Ch, 55V-0.0065ohms 80A RoHS: Compliant | 0 |
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$1.3300 / $1.3900 | Order Now |
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STMicroelectronics | N-channel 55 V, 0.0065 Ohm typ. 80 A STripFET(TM) II Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 | 0 |
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$1.6900 / $2.7900 | Buy Now |
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DISTI #
STB141NF55
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Avnet Silica | Trans MOSFET NCH 55V 80A 3Pin2Tab D2PAK TR (Alt: STB141NF55) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STB141NF55
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EBV Elektronik | Trans MOSFET NCH 55V 80A 3Pin2Tab D2PAK TR (Alt: STB141NF55) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STB141NF55
STB141NF55 CAD Models
STB141NF55 Part Data Attributes
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STB141NF55
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB141NF55
STMicroelectronics
N-channel 55 V, 0.0065 Ohm typ. 80 A STripFET(TM) II Power MOSFET in TO-220 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 290 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB141NF55
This table gives cross-reference parts and alternative options found for STB141NF55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB141NF55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.7578 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STB141NF55 vs STP4NK60Z |
| STP14NK50Z | STMicroelectronics | $1.0033 | N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET | STB141NF55 vs STP14NK50Z |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STB141NF55 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | STB141NF55 vs IPB80N06S2LH5ATMA1 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STB141NF55 vs IPD90N06S306ATMA1 |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STB141NF55 vs SSP10N60B |
| PHB65N06LT | NXP Semiconductors | Check for Price | 63A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN | STB141NF55 vs PHB65N06LT |
| NDD506A | National Semiconductor Corporation | Check for Price | TRANSISTOR 19 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power | STB141NF55 vs NDD506A |
| BUK762R0-40C | Nexperia | Check for Price | Power Field-Effect Transistor | STB141NF55 vs BUK762R0-40C |
| STD17N06L-1 | STMicroelectronics | Check for Price | 17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STB141NF55 vs STD17N06L-1 |
STB141NF55 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB141NF55 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes setting the correct voltage supply, current limits, and gate-source voltage. Additionally, consider using a voltage regulator and decoupling capacitors to minimize noise and ensure stable operation.
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For optimal thermal management, it's recommended to use a PCB layout that allows for good heat dissipation, such as using a thermal pad or heat sink. Ensure that the device is mounted on a solid copper plane and that there is adequate clearance around the device for airflow. Additionally, consider using thermal vias to dissipate heat from the top side of the PCB to the bottom side.
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To protect the STB141NF55 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.
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The recommended gate drive circuits for the STB141NF55 depend on the specific application and requirements. However, a common approach is to use a gate driver IC, such as the STMicroelectronics L638xA series, which provides a high-current, low-impedance drive signal to the gate. Alternatively, a discrete gate drive circuit using a BJT or MOSFET can also be used, but this requires careful design and component selection to ensure proper operation.