Part Details for SST215 by Calogic Inc
Results Overview of SST215 by Calogic Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SST215 Information
SST215 by Calogic Inc is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SST215
| Part # | Distributor | Description | Stock | Price | Buy | |
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Karl Kruse GmbH & Co KG | Trans MOSFET N-CH 20V 0.05A 4-Pin(3+Tab) SOT-143 | 5000 |
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RFQ | |
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NAC | ** Leaded ** cutt (DMOS) MOSFET Transistor, N-Channel, TO-253. Add "-LF" to p/n for ROHS RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 | 0 |
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$2.3400 / $2.5900 | Buy Now |
Part Details for SST215
SST215 CAD Models
SST215 Part Data Attributes
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SST215
Calogic Inc
Buy Now
Datasheet
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SST215
Calogic Inc
Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CALOGIC LLC | |
| Part Package Code | SOT-143 | |
| Package Description | SOT-143, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Case Connection | SUBSTRATE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.05 A | |
| Drain-source On Resistance-Max | 70 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.5 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SST215
This table gives cross-reference parts and alternative options found for SST215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SST215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SST215 | Linear Integrated Systems | Check for Price | Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-253AA, TO-253, 4 PIN | SST215 vs SST215 |
| SST211 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 3 PIN | SST215 vs SST211 |
| SST213 | Temic Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO253 | SST215 vs SST213 |
| BSS83 | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SST215 vs BSS83 |
| BSS83TRL13 | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SST215 vs BSS83TRL13 |
| SST211-LF | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN | SST215 vs SST211-LF |
| BSS83,215 | NXP Semiconductors | Check for Price | BSS83 - MOSFET N-channel switching transistor SOT-143 4-Pin | SST215 vs BSS83,215 |
| BSS83TRL | NXP Semiconductors | Check for Price | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | SST215 vs BSS83TRL |
| BSS83 | NXP Semiconductors | Check for Price | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SOT-143B, 4 PIN, FET General Purpose Small Signal | SST215 vs BSS83 |
| BSS83TRL13 | NXP Semiconductors | Check for Price | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | SST215 vs BSS83TRL13 |
SST215 Frequently Asked Questions (FAQ)
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A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
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Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal gradients. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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Exceeding the maximum Tj rating can lead to reduced lifespan, decreased performance, and potentially catastrophic failure. It's essential to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
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Implement ESD protection measures such as using ESD-sensitive handling procedures, using anti-static packaging and storage, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design.
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When paralleling multiple devices, ensure that each device has its own current sense resistor and that the devices are matched in terms of electrical characteristics. Also, consider the impact of current imbalance and thermal gradients on overall system performance.