-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SSM6J507NU by Toshiba America Electronic Components
Results Overview of SSM6J507NU by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SSM6J507NU Information
SSM6J507NU by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| SSM6J507NU | Toshiba Electronic Devices & Storage Corporation | MOSFET, P-ch, -30 V, -10 A, 0.02 Ohm@10V, UDFN6B |
Price & Stock for SSM6J507NU
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SSM6J507NU
|
EBV Elektronik | (Alt: SSM6J507NU) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SSM6J507NU
SSM6J507NU CAD Models
SSM6J507NU Part Data Attributes
|
|
SSM6J507NU
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
SSM6J507NU
Toshiba America Electronic Components
Small Signal MOS FET (Single)
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-N6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 185 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SSM6J507NU Frequently Asked Questions (FAQ)
-
Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
-
Ensure that the device is operated within the recommended temperature range, and consider using a heat sink or thermal interface material to reduce junction temperature.
-
The maximum allowable voltage stress on the SSM6J507NU is 1.5 times the rated voltage, but it's recommended to operate within the rated voltage to ensure reliability.
-
Yes, the SSM6J507NU is suitable for high-frequency switching applications up to 1 MHz, but ensure that the device is properly bypassed and decoupled to minimize ringing and oscillations.
-
Follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensure that the device is stored in an anti-static bag or container.