Part Details for SSM6J507NU,LF(B by Toshiba America Electronic Components
Results Overview of SSM6J507NU,LF(B by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SSM6J507NU,LF(B Information
SSM6J507NU,LF(B by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| SSM6J507NU | Toshiba Electronic Devices & Storage Corporation | MOSFET, P-ch, -30 V, -10 A, 0.02 Ohm@10V, UDFN6B |
Price & Stock for SSM6J507NU,LF(B
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
67390792
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Verical | Silicon P-Channel MOS Min Qty: 175 Package Multiple: 1 Date Code: 2301 | Americas - 1796 |
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$0.4180 / $0.4670 | Buy Now |
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|
Quest Components | 1436 |
|
$0.4780 / $1.1950 | Buy Now |
Part Details for SSM6J507NU,LF(B
SSM6J507NU,LF(B CAD Models
SSM6J507NU,LF(B Part Data Attributes
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SSM6J507NU,LF(B
Toshiba America Electronic Components
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Datasheet
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SSM6J507NU,LF(B
Toshiba America Electronic Components
Power Field-Effect Transistor, 10A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | UDFN6B, 6 PIN | |
| Reach Compliance Code | compliant | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 185 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |