Datasheets
SSI7N60BTU by:

7A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

Part Details for SSI7N60BTU by Rochester Electronics LLC

Results Overview of SSI7N60BTU by Rochester Electronics LLC

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SSI7N60BTU Information

SSI7N60BTU by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SSI7N60BTU

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SSI7N60BTU Part Data Attributes

SSI7N60BTU Rochester Electronics LLC
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SSI7N60BTU Rochester Electronics LLC 7A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-262AA
Package Description I2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 420 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSI7N60BTU

This table gives cross-reference parts and alternative options found for SSI7N60BTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSI7N60BTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SSI7N60BTU Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 SSI7N60BTU vs SSI7N60BTU
Part Number Manufacturer Composite Price Description Compare
IRFBC40LPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 SSI7N60BTU vs IRFBC40LPBF
2SK3889-01L Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN SSI7N60BTU vs 2SK3889-01L
IRFBC20LPBF International Rectifier Check for Price Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN SSI7N60BTU vs IRFBC20LPBF
FQI7N60TU onsemi Check for Price Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK, I2PAK-3 / D2PAK-3 STRAIGHT LEAD, 1000-TUBE SSI7N60BTU vs FQI7N60TU
STI13NM60N STMicroelectronics Check for Price N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package SSI7N60BTU vs STI13NM60N
2SK3116-S NEC Electronics Group Check for Price Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, 3 PIN SSI7N60BTU vs 2SK3116-S
IRF830AL International Rectifier Check for Price Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN SSI7N60BTU vs IRF830AL
IRFBC40L International Rectifier Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN SSI7N60BTU vs IRFBC40L
STB11NM60-1 STMicroelectronics Check for Price N-channel 600 V, 0.4 Ohm, 11 A, I2PAK, D2PAK MDmesh(TM) Power MOSFET SSI7N60BTU vs STB11NM60-1
2SK3299-S Renesas Electronics Corporation Check for Price 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN SSI7N60BTU vs 2SK3299-S

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