Part Details for SSH70N10A by Fairchild Semiconductor Corporation
Results Overview of SSH70N10A by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SSH70N10A Information
SSH70N10A by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSH70N10A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 20 |
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$2.9250 / $5.8500 | Buy Now | |
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ComSIT USA | N-CHANNEL ADVANCED POWER MOSFET Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
Part Details for SSH70N10A
SSH70N10A CAD Models
SSH70N10A Part Data Attributes
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SSH70N10A
Fairchild Semiconductor Corporation
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Datasheet
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SSH70N10A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO3, PLASTIC, EIAJ SC-65, ISOLATED | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 1633 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SSH70N10A Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SSH70N10A is -55°C to 150°C.
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To ensure reliability, follow proper PCB design and layout guidelines, use a robust thermal management system, and implement adequate ESD protection measures.
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The recommended gate drive voltage for the SSH70N10A is between 10V to 15V, with a maximum gate-source voltage of ±20V.
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To minimize power losses, ensure proper thermal management, use a low-inductance PCB layout, and optimize the gate drive circuitry for fast switching times.
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Yes, the SSH70N10A is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB design and layout to minimize parasitic inductances.