Part Details for SQM40N15-38-GE3 by Vishay Siliconix
Results Overview of SQM40N15-38-GE3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SQM40N15-38-GE3 Information
SQM40N15-38-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SQM40N15-38-GE3
SQM40N15-38-GE3 CAD Models
SQM40N15-38-GE3 Part Data Attributes
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SQM40N15-38-GE3
Vishay Siliconix
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Datasheet
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SQM40N15-38-GE3
Vishay Siliconix
TRANSISTOR 40 A, 150 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for SQM40N15-38-GE3
This table gives cross-reference parts and alternative options found for SQM40N15-38-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQM40N15-38-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2SK3780-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | SQM40N15-38-GE3 vs 2SK3780-01 |
| 2SK2142 | onsemi | Check for Price | 12A, 250V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | SQM40N15-38-GE3 vs 2SK2142 |
| 2SK2108 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 6A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SQM40N15-38-GE3 vs 2SK2108 |
| 2SK2192 | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | SQM40N15-38-GE3 vs 2SK2192 |
| 2SK3339-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 27A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | SQM40N15-38-GE3 vs 2SK3339-01 |
| 2SK1406 | Panasonic Electronic Components | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TOP3, FULL PACK-3 | SQM40N15-38-GE3 vs 2SK1406 |
| 2SK3888-01MR | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | SQM40N15-38-GE3 vs 2SK3888-01MR |
| 2SK3531-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 6A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SQM40N15-38-GE3 vs 2SK3531-01 |
| 2SK1257 | Panasonic Electronic Components | Check for Price | Power Field-Effect Transistor, 40A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(A), 3 PIN | SQM40N15-38-GE3 vs 2SK1257 |
| 2SK1094 | Hitachi Ltd | Check for Price | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN | SQM40N15-38-GE3 vs 2SK1094 |
SQM40N15-38-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for SQM40N15-38_GE3 is a TO-247-3L package with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux compatible with the component's lead finish. Avoid overheating or applying excessive force, which can damage the component.
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The maximum allowed voltage derating for SQM40N15-38_GE3 is 80% of the maximum rated voltage (150V) at a junction temperature of 150°C. This means the maximum allowed voltage is 120V.
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Yes, SQM40N15-38_GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the component's switching losses, gate charge, and parasitic inductance to ensure reliable operation.
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To protect SQM40N15-38_GE3 from ESD, handle the component in an ESD-controlled environment, use ESD-protective packaging, and ensure that all personnel handling the component wear ESD-protective wrist straps or clothing.