Part Details for SQM120N04-1M9_GE3 by Vishay Intertechnologies
Results Overview of SQM120N04-1M9_GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SQM120N04-1M9_GE3 Information
SQM120N04-1M9_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQM120N04-1M9_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQM120N04-1M9_GE3
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin TO-263 - Bulk (Alt: SQM120N04-1M9_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.4230 / $1.5125 | Buy Now |
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DISTI #
781-SQM120N041M9GE
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Mouser Electronics | MOSFETs 40V 120A 300W AEC-Q101 Qualified RoHS: Compliant | 0 |
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$1.5100 | Order Now |
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Bristol Electronics | 344 |
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RFQ | ||
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Quest Components | 275 |
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$2.2348 / $3.6240 | Buy Now | |
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DISTI #
SQM120N04-1M9_GE3
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EBV Elektronik | Trans MOSFET NCH 40V 120A 3Pin TO263 (Alt: SQM120N04-1M9_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQM120N04-1M9_GE3
SQM120N04-1M9_GE3 CAD Models
SQM120N04-1M9_GE3 Part Data Attributes
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SQM120N04-1M9_GE3
Vishay Intertechnologies
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Datasheet
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SQM120N04-1M9_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 352 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |