Part Details for SQJ461EP-T1-GE3 by Vishay Siliconix
Results Overview of SQJ461EP-T1-GE3 by Vishay Siliconix
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SQJ461EP-T1-GE3 Information
SQJ461EP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SQJ461EP-T1-GE3
SQJ461EP-T1-GE3 CAD Models
SQJ461EP-T1-GE3 Part Data Attributes
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SQJ461EP-T1-GE3
Vishay Siliconix
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Datasheet
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SQJ461EP-T1-GE3
Vishay Siliconix
MOSFET P-CH D-S 60V TO252
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 21.7 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 85 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
SQJ461EP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage temperature for SQJ461EP-T1_GE3 is -40°C to 125°C.
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Yes, SQJ461EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
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The thermal resistance of SQJ461EP-T1_GE3 is 10°C/W (junction-to-ambient) and 2°C/W (junction-to-case).
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Yes, SQJ461EP-T1_GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
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The recommended soldering temperature for SQJ461EP-T1_GE3 is 260°C for 10 seconds (max).