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Part Details for SQJ457EP-T1_GE3 by Vishay Intertechnologies
Results Overview of SQJ457EP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Communication and Networking
SQJ457EP-T1_GE3 Information
SQJ457EP-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQJ457EP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
75AH9218
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Newark | Mosfet, P-Ch, 60V, 36A, Powerpak So, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQJ457EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5336 |
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$0.4410 | Buy Now |
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DISTI #
38AH2535
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Newark | P-Channel 60-V (D-S) 175C Mosfet |Vishay SQJ457EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3780 / $0.4460 | Buy Now |
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DISTI #
20AC4031
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Newark | P-Channel 60-V (D-S) 175C Mosfet |Vishay SQJ457EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4060 / $0.4740 | Buy Now |
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DISTI #
SQJ457EP-T1_GE3
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Avnet Americas | Power MOSFET, P Channel, 60 V, 36 A, 0.021 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SQJ457EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.3339 / $0.3548 | Buy Now |
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DISTI #
78-SQJ457EP-T1_GE3
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Mouser Electronics | MOSFETs P Ch -60Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant | 116093 |
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$0.3680 / $0.9200 | Buy Now |
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DISTI #
V36:1790_17581457
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Arrow Electronics | Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks Date Code: 2405 | Americas - 75000 |
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$0.3249 / $0.3505 | Buy Now |
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DISTI #
V72:2272_17581457
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Arrow Electronics | Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks Date Code: 2339 Container: Cut Strips | Americas - 2984 |
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$0.3540 / $0.9000 | Buy Now |
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DISTI #
84744217
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Verical | Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2405 | Americas - 75000 |
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$0.3249 / $0.3505 | Buy Now |
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DISTI #
71819220
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Verical | Trans MOSFET P-CH 60V 36A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 18 Package Multiple: 1 Date Code: 2339 | Americas - 2984 |
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$0.3540 / $0.7131 | Buy Now |
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Chip 1 Exchange | INSTOCK | 15000 |
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RFQ |
Part Details for SQJ457EP-T1_GE3
SQJ457EP-T1_GE3 CAD Models
SQJ457EP-T1_GE3 Part Data Attributes
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SQJ457EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ457EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SO-8L,4 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Date Of Intro | 2016-07-19 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 64.8 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 275 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 87 ns | |
| Turn-on Time-Max (ton) | 35 ns |
SQJ457EP-T1_GE3 Frequently Asked Questions (FAQ)
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Store the components in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C, and the relative humidity should be below 60%.
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Handle the components by the body, avoiding touching the leads or the glass seal. Use anti-static wrist straps, mats, or floors to prevent electrostatic discharge damage.
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The maximum allowable voltage for SQJ457EP-T1_GE3 is 1.5 times the rated voltage (450V) for a short duration (less than 1 second). However, it's recommended to operate within the rated voltage to ensure reliability and longevity.
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While the SQJ457EP-T1_GE3 is rated for operation up to 150°C, it's essential to consider the derating curve and ensure the component does not exceed the maximum allowable temperature. Consult the datasheet and application notes for guidance on high-temperature applications.
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To ensure reliability in humid environments, follow the recommended storage and handling procedures. Additionally, consider applying a conformal coating or potting the component to protect it from moisture ingress.