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Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SO-8L, 4 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SQJ431EP-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96Y9632
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Newark | Mosfet, Aec-Q101, P-Ch, -200V, -12A, Channel Type:P Channel, Drain Source Voltage Vds:-200V, Continuous Drain Current Id:-12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-3V Rohs Compliant: Yes |Vishay SQJ431EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 379 |
|
$1.0700 / $1.1700 | Buy Now |
DISTI #
76Y1533
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Newark | P-Channel 200-V (D-S) 175C Mosfet |Vishay SQJ431EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8800 / $1.0400 | Buy Now |
DISTI #
96Y9632
|
Avnet Americas | Trans MOSFET P-CH -200V -12A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 96Y9632) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 379 Partner Stock |
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$1.4800 / $2.2300 | Buy Now |
DISTI #
SQJ431EP-T1_GE3
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Avnet Americas | Trans MOSFET P-CH -200V -12A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ431EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.7506 / $0.7975 | Buy Now |
DISTI #
781-SQJ431EP-T1_GE3
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Mouser Electronics | MOSFETs -200v -12A 83W AEC-Q101 Qualified RoHS: Compliant | 45524 |
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$0.7970 / $2.0900 | Buy Now |
DISTI #
V36:1790_09219211
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Arrow Electronics | Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks Date Code: 2446 | Americas - 9000 |
|
$0.7938 | Buy Now |
DISTI #
E02:0323_06609587
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Arrow Electronics | Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2425 | Europe - 6000 |
|
$0.8960 | Buy Now |
DISTI #
V72:2272_09219211
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Arrow Electronics | Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks Date Code: 2327 Container: Cut Strips | Americas - 4 |
|
$0.8017 | Buy Now |
|
Future Electronics | SQJ431EP Series 200 V 0.213 Ohms P-Channel Power Mosfet - PowerPAK-SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 3000Reel |
|
$0.8550 | Buy Now |
DISTI #
87115855
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Verical | Trans MOSFET P-CH 200V 12A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2446 | Americas - 9000 |
|
$0.7938 | Buy Now |
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SQJ431EP-T1_GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SQJ431EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SO-8L, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SO-8L, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.221 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
The recommended storage temperature for SQJ431EP-T1_GE3 is -40°C to 125°C.
Yes, SQJ431EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
The maximum power dissipation for SQJ431EP-T1_GE3 is 1.5 W at 25°C ambient temperature.
Yes, SQJ431EP-T1_GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
The typical turn-on time for SQJ431EP-T1_GE3 is 10 ns.