Part Details for SQD50N06-07L-GE3 by Vishay Intertechnologies
Results Overview of SQD50N06-07L-GE3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
SQD50N06-07L-GE3 Information
SQD50N06-07L-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQD50N06-07L-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1869918
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element14 Asia-Pacific | , MOSFET, N, , 60V, 50A, TO-252 RoHS: Compliant Min Qty: 1 Container: Each | 42 |
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$1.1300 / $1.2700 | Buy Now |
Part Details for SQD50N06-07L-GE3
SQD50N06-07L-GE3 CAD Models
SQD50N06-07L-GE3 Part Data Attributes
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SQD50N06-07L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SQD50N06-07L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
SQD50N06-07L-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SQD50N06-07L-GE3 is a TO-252 (D-PAK) package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a solder flux to the pins. Use a solder with a melting point of 180°C to 220°C, and avoid applying excessive solder or heat to prevent damage to the device.
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The maximum allowed voltage on the gate-source pin (Vgs) of the SQD50N06-07L-GE3 is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the SQD50N06-07L-GE3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and EMI.
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To calculate the power dissipation of the SQD50N06-07L-GE3, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. Ensure the calculated power dissipation is within the device's maximum rating of 50W.