Part Details for SQD40P10-40L-GE3 by Vishay Siliconix
Results Overview of SQD40P10-40L-GE3 by Vishay Siliconix
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- Part Data Attributes: (Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SQD40P10-40L-GE3 Information
SQD40P10-40L-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SQD40P10-40L-GE3
SQD40P10-40L-GE3 CAD Models
SQD40P10-40L-GE3 Part Data Attributes
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SQD40P10-40L-GE3
Vishay Siliconix
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Datasheet
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SQD40P10-40L-GE3
Vishay Siliconix
SQD40P10-40L Automotive P-Channel 100 V (D-S) 175 °C MOSFET
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 96 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
SQD40P10-40L-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SQD40P10-40L_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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Yes, SQD40P10-40L_GE3 is suitable for high-reliability applications due to its high-quality construction and rigorous testing, making it a reliable choice for critical systems.
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To prevent electrostatic discharge (ESD) damage, handle SQD40P10-40L_GE3 components with anti-static wrist straps, mats, or bags, and ensure a grounded workstation.
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The maximum allowable voltage derating for SQD40P10-40L_GE3 is 80% of the rated voltage, ensuring a safe operating margin and preventing premature failure.
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Yes, SQD40P10-40L_GE3 is designed to operate in high-temperature environments up to 150°C, making it suitable for applications in harsh environments.