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Power Field-Effect Transistor, 100A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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SQD100N02-3M5L_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQD100N02-3M5L_GE3
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Avnet Americas | - Tape and Reel (Alt: SQD100N02-3M5L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.5760 / $0.5880 | Buy Now |
DISTI #
78-SQD100N02-3M5LGE3
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Mouser Electronics | MOSFETs N Ch 20Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant | 5850 |
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$0.6000 / $1.6600 | Buy Now |
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SQD100N02-3M5L_GE3
Vishay Intertechnologies
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Datasheet
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SQD100N02-3M5L_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 100A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 101 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
The recommended PCB footprint for the SQD100N02-3M5L_GE3 is a 5-pin TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
Yes, the SQD100N02-3M5L_GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing. However, it's essential to follow Vishay's recommended design and assembly guidelines to ensure optimal performance and reliability.
To ensure the SQD100N02-3M5L_GE3 operates within its SOA, follow the recommended voltage and current ratings, and ensure the device is properly cooled. Monitor the device's temperature and adjust the thermal design as needed to prevent overheating.
Yes, the SQD100N02-3M5L_GE3 is compatible with lead-free soldering processes, such as RoHS and WEEE compliant soldering. However, it's essential to follow Vishay's recommended soldering guidelines to ensure optimal performance and reliability.
The typical turn-on and turn-off time for the SQD100N02-3M5L_GE3 is around 10-20 ns, depending on the specific application and circuit design. However, this value can vary depending on the specific use case and operating conditions.