Part Details for SQ2360EES-T1-GE3 by Vishay Siliconix
Results Overview of SQ2360EES-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SQ2360EES-T1-GE3 Information
SQ2360EES-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQ2360EES-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70459600
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RS | SQ2360EES-T1-GE3 N-channel MOSFET Transistor, 4.4 A, 60 V, 3-Pin SOT-23 Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.4740 / $0.5580 | RFQ |
Part Details for SQ2360EES-T1-GE3
SQ2360EES-T1-GE3 CAD Models
SQ2360EES-T1-GE3 Part Data Attributes
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SQ2360EES-T1-GE3
Vishay Siliconix
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Datasheet
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SQ2360EES-T1-GE3
Vishay Siliconix
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1.8 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SQ2360EES-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SQ2360EES-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 125°C). Also, follow proper thermal design and layout guidelines to minimize thermal resistance and ensure adequate heat dissipation.
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The SQ2360EES-T1-GE3 has built-in ESD protection, but it's still recommended to follow proper ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and store the devices in anti-static packaging.
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Yes, the SQ2360EES-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard and is PPAP capable. However, ensure that you follow the recommended design and testing guidelines for your specific application.
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The recommended soldering conditions for the SQ2360EES-T1-GE3 are a peak temperature of 260°C, with a soldering time of 10-30 seconds. Use a solder with a melting point of 217°C or higher, and follow the recommended soldering profile to prevent damage.