Part Details for SPW17N80C3CKSA1 by Infineon Technologies AG
Results Overview of SPW17N80C3CKSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPW17N80C3CKSA1 Information
SPW17N80C3CKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPW17N80C3CKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1324 |
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RFQ |
Part Details for SPW17N80C3CKSA1
SPW17N80C3CKSA1 CAD Models
SPW17N80C3CKSA1 Part Data Attributes
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SPW17N80C3CKSA1
Infineon Technologies AG
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Datasheet
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SPW17N80C3CKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 670 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 51 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW17N80C3CKSA1
This table gives cross-reference parts and alternative options found for SPW17N80C3CKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW17N80C3CKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPP17N80C3 | Infineon Technologies AG | $1.9096 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPW17N80C3CKSA1 vs SPP17N80C3 |
| SPA17N80C3 | Infineon Technologies AG | $2.4695 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 | SPW17N80C3CKSA1 vs SPA17N80C3 |
| SPW17N80C3 | Infineon Technologies AG | $2.6319 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SPW17N80C3CKSA1 vs SPW17N80C3 |
| SPP17N80C3XKSA1 | Infineon Technologies AG | $2.9394 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | SPW17N80C3CKSA1 vs SPP17N80C3XKSA1 |
| SPB17N80C3 | Infineon Technologies AG | $3.4494 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | SPW17N80C3CKSA1 vs SPB17N80C3 |
| STB18NM80 | STMicroelectronics | $3.8006 | N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package | SPW17N80C3CKSA1 vs STB18NM80 |
| Q67040-S4354 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, D2PAK-3/2 | SPW17N80C3CKSA1 vs Q67040-S4354 |
| STB18NM80TRL | STMicroelectronics | Check for Price | 17A, 800V, 0.295ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | SPW17N80C3CKSA1 vs STB18NM80TRL |
| APT17N80SC3G | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | SPW17N80C3CKSA1 vs APT17N80SC3G |
| SPP17N80C3E3064 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPW17N80C3CKSA1 vs SPP17N80C3E3064 |