Part Details for SPW12N50C3 by Rochester Electronics LLC
Results Overview of SPW12N50C3 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SPW12N50C3 Information
SPW12N50C3 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SPW12N50C3
SPW12N50C3 CAD Models
SPW12N50C3 Part Data Attributes
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SPW12N50C3
Rochester Electronics LLC
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Datasheet
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SPW12N50C3
Rochester Electronics LLC
11.6A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-247AD | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11.6 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34.8 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW12N50C3
This table gives cross-reference parts and alternative options found for SPW12N50C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW12N50C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF10N60C | Rochester Electronics LLC | Check for Price | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | SPW12N50C3 vs FQPF10N60C |
| FQA15N70 | Rochester Electronics LLC | Check for Price | 15A, 700V, 0.56ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | SPW12N50C3 vs FQA15N70 |
| FQP4N90 | Rochester Electronics LLC | Check for Price | 4.2A, 900V, 3.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | SPW12N50C3 vs FQP4N90 |
| FQP6N50C | Rochester Electronics LLC | Check for Price | 5.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | SPW12N50C3 vs FQP6N50C |
| FDB2572 | Rochester Electronics LLC | Check for Price | 4A, 150V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | SPW12N50C3 vs FDB2572 |
| SPP04N60S5 | Rochester Electronics LLC | Check for Price | 4.5A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | SPW12N50C3 vs SPP04N60S5 |
| ISL9N312AS3ST | Rochester Electronics LLC | Check for Price | 58A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | SPW12N50C3 vs ISL9N312AS3ST |
| RFP12N18 | Rochester Electronics LLC | Check for Price | 12A, 180V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | SPW12N50C3 vs RFP12N18 |
| IRF448 | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | SPW12N50C3 vs IRF448 |
| IRFIP054 | International Rectifier | Check for Price | Power Field-Effect Transistor, 64A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | SPW12N50C3 vs IRFIP054 |