Part Details for SPW12N50C3 by Infineon Technologies AG
Results Overview of SPW12N50C3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPW12N50C3 Information
SPW12N50C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPW12N50C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000014469
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EBV Elektronik | Trans MOSFET NCH 560V 116A 3Pin TO247 Tube (Alt: SP000014469) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for SPW12N50C3
SPW12N50C3 CAD Models
SPW12N50C3 Part Data Attributes
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SPW12N50C3
Infineon Technologies AG
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Datasheet
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SPW12N50C3
Infineon Technologies AG
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AD | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11.6 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 34.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW12N50C3
This table gives cross-reference parts and alternative options found for SPW12N50C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW12N50C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP13N60M2 | STMicroelectronics | $1.0798 | N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package | SPW12N50C3 vs STP13N60M2 |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPW12N50C3 vs IRFS620 |
| NTP15N40 | onsemi | Check for Price | 15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | SPW12N50C3 vs NTP15N40 |
| PHD3055L | NXP Semiconductors | Check for Price | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | SPW12N50C3 vs PHD3055L |
| FDB2572 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | SPW12N50C3 vs FDB2572 |
| IRF610B_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | SPW12N50C3 vs IRF610B_FP001 |
| FQP16N25 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 250V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPW12N50C3 vs FQP16N25 |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | SPW12N50C3 vs NP82N055NUG-S18-AY |
| STD9N10T4 | STMicroelectronics | Check for Price | 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | SPW12N50C3 vs STD9N10T4 |
| SSH60N08 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | SPW12N50C3 vs SSH60N08 |
SPW12N50C3 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the SPW12N50C3 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides guidelines for calculating the SOA for Infineon power MOSFETs.
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To ensure proper cooling, the device should be mounted on a heat sink with a thermal resistance of less than 1 K/W. The heat sink should be designed to provide good airflow, and the device should be attached to the heat sink using a thermal interface material (TIM) with a thermal resistance of less than 0.1 K/W.
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The recommended gate drive voltage for the SPW12N50C3 is between 10 V and 15 V, with a current limit of 1 A. The gate drive voltage should be chosen to ensure that the device is fully enhanced, but not so high that it exceeds the maximum gate-source voltage rating.
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To protect the SPW12N50C3 from ESD, it is recommended to handle the device in an ESD-protected environment, use ESD-protected packaging and storage, and ensure that all personnel handling the device are grounded using an ESD wrist strap or mat.
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The recommended PCB layout and design considerations for the SPW12N50C3 include using a multi-layer PCB with a solid ground plane, minimizing the length and inductance of the drain and source connections, and ensuring that the gate drive circuit is properly decoupled from the power circuit.