Part Details for SPS04N60C3BKMA1 by Infineon Technologies AG
Results Overview of SPS04N60C3BKMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPS04N60C3BKMA1 Information
SPS04N60C3BKMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPS04N60C3BKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86149440
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Verical | Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube Min Qty: 394 Package Multiple: 1 Date Code: 1401 | Americas - 15000 |
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$0.5906 / $0.9526 | Buy Now |
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Rochester Electronics | 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 15000 |
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$0.4725 / $0.7621 | Buy Now |
Part Details for SPS04N60C3BKMA1
SPS04N60C3BKMA1 CAD Models
SPS04N60C3BKMA1 Part Data Attributes
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SPS04N60C3BKMA1
Infineon Technologies AG
Buy Now
Datasheet
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SPS04N60C3BKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-251AA | |
| Package Description | GREEN, PLASTIC, TO-251, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 13.5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SPS04N60C3BKMA1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SPS04N60C3BKMA1 is a TO-220 Full Pack footprint with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 4.5mm x 4.5mm.
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To ensure reliability in high-temperature applications, it is recommended to follow the derating curves provided in the datasheet, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.
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The maximum allowed voltage transient for the SPS04N60C3BKMA1 is 80V, as specified in the datasheet. Exceeding this value may damage the device.
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Yes, the SPS04N60C3BKMA1 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and that the layout is designed to minimize current imbalance.
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The recommended gate resistor value for the SPS04N60C3BKMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.