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Part Details for SPP21N50C3XKSA1 by Infineon Technologies AG
Results Overview of SPP21N50C3XKSA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPP21N50C3XKSA1 Information
SPP21N50C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP21N50C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9424
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Newark | Mosfet, N-Ch, 560V, 21A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:21A, Drain Source Voltage Vds:560V, On Resistance Rds(On):0.16Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon SPP21N50C3XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 570 |
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$2.5200 / $4.8300 | Buy Now |
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DISTI #
448-SPP21N50C3XKSA1-ND
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DigiKey | MOSFET N-CH 500V 21A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
83 In Stock |
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$1.5231 / $4.1200 | Buy Now |
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DISTI #
SPP21N50C3XKSA1
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Avnet Americas | Power MOSFET, N Channel, 560 V, 21 A, 0.16 ohm, TO-220, Through Hole - Rail/Tube (Alt: SPP21N50C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.3862 / $1.4486 | Buy Now |
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DISTI #
726-SPP21N50C3XKSA1
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Mouser Electronics | MOSFETs N-Ch 560V 21A TO220-3 RoHS: Compliant | 290 |
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$1.5200 / $4.0800 | Buy Now |
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DISTI #
E02:0323_06941848
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Arrow Electronics | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks | Europe - 160 |
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$1.4442 / $1.7790 | Buy Now |
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DISTI #
18774586
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Verical | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 | Americas - 160 |
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$2.5635 | Buy Now |
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Bristol Electronics | 1950 |
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RFQ | ||
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Quest Components | 1560 |
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$2.4720 / $4.9440 | Buy Now | |
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DISTI #
SPP21N50C3XKSA1
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IBS Electronics | SPP21N50C3XKSA1 by Infineon SCT is a single N-channel CoolMOS power MOSFET with 500 V, 190 mOhm Rds(on), 95 nC gate charge, in a TO-220-3 package, ideal for high-efficiency power applications. Min Qty: 500 Package Multiple: 1 | 0 |
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$1.8590 / $1.9110 | Buy Now |
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Cytech Systems Limited | MOSFET N-CH 500V 21A TO220-3 | 650 |
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RFQ |
Part Details for SPP21N50C3XKSA1
SPP21N50C3XKSA1 CAD Models
SPP21N50C3XKSA1 Part Data Attributes
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SPP21N50C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP21N50C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP21N50C3XKSA1
This table gives cross-reference parts and alternative options found for SPP21N50C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP21N50C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHP20N50E-GE3 | Vishay Intertechnologies | $1.8321 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | SPP21N50C3XKSA1 vs SIHP20N50E-GE3 |
| SPB21N50C3ATMA1 | Infineon Technologies AG | $2.1194 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SPP21N50C3XKSA1 vs SPB21N50C3ATMA1 |
| SIHB20N50E-GE3 | Vishay Intertechnologies | $2.2796 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | SPP21N50C3XKSA1 vs SIHB20N50E-GE3 |
| SPI21N50C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | SPP21N50C3XKSA1 vs SPI21N50C3XKSA1 |
| SPI21N50C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | SPP21N50C3XKSA1 vs SPI21N50C3 |
| SPB21N50C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SPP21N50C3XKSA1 vs SPB21N50C3 |
| SPI21N50C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | SPP21N50C3XKSA1 vs SPI21N50C3HKSA1 |
SPP21N50C3XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the SPP21N50C3XKSA1 is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
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The maximum current rating of the SPP21N50C3XKSA1 is 21A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the SPP21N50C3XKSA1 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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The recommended gate drive voltage for the SPP21N50C3XKSA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.