Datasheets
SPP21N50C3 by:

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for SPP21N50C3 by Infineon Technologies AG

Results Overview of SPP21N50C3 by Infineon Technologies AG

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SPP21N50C3 Information

SPP21N50C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SPP21N50C3

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,21A I(D),TO-220 22
  • 1 $9.1125
  • 4 $6.6825
  • 12 $6.0750
$6.0750 / $9.1125 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,21A I(D),TO-220 4
  • 1 $9.1125
  • 2 $6.0750
  • 5 $4.5563
$4.5563 / $9.1125 Buy Now
DISTI # SPP21N50C3
TME Transistor: N-MOSFET, unipolar, 560V, 13.1A, 208W, PG-TO220-3 Min Qty: 1 53
  • 1 $5.3900
  • 3 $4.8500
  • 10 $4.2900
  • 50 $3.8500
$3.8500 / $5.3900 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 506
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Cytech Systems Limited   1000
RFQ

Part Details for SPP21N50C3

SPP21N50C3 CAD Models

SPP21N50C3 Part Data Attributes

SPP21N50C3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPP21N50C3 Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 63 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

SPP21N50C3 Related Parts

SPP21N50C3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the SPP21N50C3 is 175°C, as specified in the datasheet.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.

  • The maximum current rating of the SPP21N50C3 is 21A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.

  • To protect the SPP21N50C3 from overvoltage, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, ensure that the device is operated within its specified voltage ratings.

  • The recommended gate drive voltage for the SPP21N50C3 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.

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