-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPP21N50C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,21A I(D),TO-220 | 22 |
|
$6.0750 / $9.1125 | Buy Now |
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,21A I(D),TO-220 | 4 |
|
$4.5563 / $9.1125 | Buy Now |
DISTI #
SPP21N50C3
|
TME | Transistor: N-MOSFET, unipolar, 560V, 13.1A, 208W, PG-TO220-3 Min Qty: 1 | 53 |
|
$3.8500 / $5.3900 | Buy Now |
|
ComSIT USA | Electronic Component RoHS: Not Compliant |
|
|
RFQ | |
|
Cytech Systems Limited | 1000 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SPP21N50C3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPP21N50C3
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 63 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature of the SPP21N50C3 is 175°C, as specified in the datasheet.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
The maximum current rating of the SPP21N50C3 is 21A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
To protect the SPP21N50C3 from overvoltage, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, ensure that the device is operated within its specified voltage ratings.
The recommended gate drive voltage for the SPP21N50C3 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.