Part Details for SPP11N80C3XKSA1 by Infineon Technologies AG
Results Overview of SPP11N80C3XKSA1 by Infineon Technologies AG
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPP11N80C3XKSA1 Information
SPP11N80C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP11N80C3XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47Y8131
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Newark | Mosfet, N-Ch, 800V, 11A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPP11N80C3XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 156 |
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$1.3200 / $3.2600 | Buy Now |
DISTI #
SPP11N80C3XKSA1-ND
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DigiKey | MOSFET N-CH 800V 11A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
3265 In Stock |
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$1.2090 / $3.3200 | Buy Now |
DISTI #
47Y8131
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Avnet Americas | Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220, Through Hole - Bulk (Alt: 47Y8131) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 36 Partner Stock |
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$1.5300 / $2.9600 | Buy Now |
DISTI #
SPP11N80C3XKSA1
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Avnet Americas | - Rail/Tube (Alt: SPP11N80C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.9620 / $0.9821 | Buy Now |
DISTI #
726-SPP11N80C3XKSA1
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Mouser Electronics | MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3 RoHS: Compliant | 107 |
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$1.2200 / $3.5000 | Buy Now |
DISTI #
E02:0323_00042342
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Arrow Electronics | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2401 | Europe - 2942 |
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$1.0353 / $3.3253 | Buy Now |
DISTI #
V36:1790_06377297
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Arrow Electronics | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks Date Code: 2225 | Americas - 791 |
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$0.9150 / $0.9221 | Buy Now |
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Future Electronics | Single N-Channel 800 V 450 Ohm 64 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Container: Tube | 500Tube |
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$0.9750 / $1.1200 | Buy Now |
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Future Electronics | Single N-Channel 800 V 450 Ohm 64 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.9750 / $1.0300 | Buy Now |
DISTI #
87601058
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Verical | Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2401 | Americas - 2942 |
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$1.0366 / $3.3294 | Buy Now |
Part Details for SPP11N80C3XKSA1
SPP11N80C3XKSA1 CAD Models
SPP11N80C3XKSA1 Part Data Attributes
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SPP11N80C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP11N80C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 470 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SPP11N80C3XKSA1
This table gives cross-reference parts and alternative options found for SPP11N80C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP11N80C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
APT11N80KC3G | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SPP11N80C3XKSA1 vs APT11N80KC3G |
SPP11N80C3XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SPP11N80C3XKSA1 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1 K/W, and ensuring good thermal contact between the MOSFET and heat sink.
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The recommended gate resistor value for the SPP11N80C3XKSA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the SPP11N80C3XKSA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.