Part Details for SPP11N80C3XK by Infineon Technologies AG
Results Overview of SPP11N80C3XK by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
SPP11N80C3XK Information
SPP11N80C3XK by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP11N80C3XK
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPP11N80C3XK
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Mouser Electronics | MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3 RoHS: Compliant | 29 |
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$1.2200 / $2.9600 | Buy Now |
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Vyrian | Transistors | 628 |
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RFQ |
Part Details for SPP11N80C3XK
SPP11N80C3XK CAD Models
SPP11N80C3XK Part Data Attributes
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SPP11N80C3XK
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP11N80C3XK
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP11N80C3XK
This table gives cross-reference parts and alternative options found for SPP11N80C3XK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP11N80C3XK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPP11N80C3XKSA1 | Infineon Technologies AG | $1.8772 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPP11N80C3XK vs SPP11N80C3XKSA1 |
| APT11N80KC3G | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SPP11N80C3XK vs APT11N80KC3G |
SPP11N80C3XK Frequently Asked Questions (FAQ)
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The maximum operating temperature of the SPP11N80C3XK is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1 K/W is recommended. Additionally, the MOSFET should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
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The maximum current rating of the SPP11N80C3XK is 11 A, as specified in the datasheet. However, this rating is dependent on the operating conditions and cooling system used.
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To protect the SPP11N80C3XK from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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The recommended gate drive voltage for the SPP11N80C3XK is between 10 V and 15 V, as specified in the datasheet. A higher gate drive voltage can improve switching performance, but may also increase power consumption.