Part Details for SPP100N03S2L-03 by Infineon Technologies AG
Results Overview of SPP100N03S2L-03 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SPP100N03S2L-03 Information
SPP100N03S2L-03 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP100N03S2L-03
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 68 |
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$2.6000 / $6.0000 | Buy Now |
Part Details for SPP100N03S2L-03
SPP100N03S2L-03 CAD Models
SPP100N03S2L-03 Part Data Attributes
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SPP100N03S2L-03
Infineon Technologies AG
Buy Now
Datasheet
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SPP100N03S2L-03
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0037 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SPP100N03S2L-03 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the SPP100N03S2L-03 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
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To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. Additionally, consider the thermal resistance of the PCB and the surrounding environment.
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The recommended gate drive voltage for the SPP100N03S2L-03 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the SPP100N03S2L-03 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching losses, parasitic inductances, and PCB layout to ensure optimal performance and minimize electromagnetic interference (EMI).
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To protect the SPP100N03S2L-03 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.