Part Details for SPI15N60C3 by Infineon Technologies AG
Results Overview of SPI15N60C3 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPI15N60C3 Information
SPI15N60C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPI15N60C3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-SPI15N60C3-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 197 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
894 In Stock |
|
$1.5300 | Buy Now |
|
DISTI #
86042087
|
Verical | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 205 Package Multiple: 1 Date Code: 1301 | Americas - 15000 |
|
$1.8375 | Buy Now |
|
DISTI #
86038556
|
Verical | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 205 Package Multiple: 1 | Americas - 443 |
|
$1.8375 | Buy Now |
|
DISTI #
86041248
|
Verical | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 205 Package Multiple: 1 Date Code: 0601 | Americas - 251 |
|
$1.8375 | Buy Now |
|
|
Rochester Electronics | SPI15N60 - CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 15894 |
|
$1.1800 / $1.4700 | Buy Now |
|
|
Vyrian | Transistors | 10407 |
|
RFQ |
Part Details for SPI15N60C3
SPI15N60C3 CAD Models
SPI15N60C3 Part Data Attributes
|
|
SPI15N60C3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPI15N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | TO-262, I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SPI15N60C3 Frequently Asked Questions (FAQ)
-
The SPI15N60C3 is a power MOSFET, not a digital device, so it does not have a maximum operating frequency. However, the switching frequency of the device is typically limited by the application and the driver circuitry.
-
To ensure the SPI15N60C3 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate driver circuit can be used to provide a high current pulse to the gate.
-
The maximum power dissipation of the SPI15N60C3 is dependent on the thermal design of the application. The datasheet provides a thermal resistance (Rth) value, which can be used to calculate the maximum power dissipation for a given temperature rise.
-
Yes, the SPI15N60C3 is a qualified automotive-grade device, making it suitable for high-reliability applications. However, the device should be used within its specified operating conditions, and the application should be designed to minimize stress on the device.
-
To protect the SPI15N60C3 from overvoltage and overcurrent, a suitable voltage clamp or surge protector can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.