Part Details for SPD30N03S2L07GBTMA1 by Infineon Technologies AG
Results Overview of SPD30N03S2L07GBTMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPD30N03S2L07GBTMA1 Information
SPD30N03S2L07GBTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPD30N03S2L07GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86142457
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Verical | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R Min Qty: 422 Package Multiple: 1 Date Code: 1401 | Americas - 7500 |
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$0.5513 / $0.8891 | Buy Now |
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DISTI #
86143716
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Verical | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R Min Qty: 422 Package Multiple: 1 Date Code: 1101 | Americas - 1757 |
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$0.5513 / $0.8891 | Buy Now |
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Rochester Electronics | OptlMOS, 30A, 30V, 0.0098ohm, N-Channel, Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 9257 |
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$0.4410 / $0.7113 | Buy Now |
Part Details for SPD30N03S2L07GBTMA1
SPD30N03S2L07GBTMA1 CAD Models
SPD30N03S2L07GBTMA1 Part Data Attributes
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SPD30N03S2L07GBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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SPD30N03S2L07GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0098 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD30N03S2L07GBTMA1
This table gives cross-reference parts and alternative options found for SPD30N03S2L07GBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD30N03S2L07GBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SQJ840EP-T1_GE3 | Vishay Intertechnologies | $1.3325 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN | SPD30N03S2L07GBTMA1 vs SQJ840EP-T1_GE3 |
| TPH11003NL | Toshiba America Electronic Components | Check for Price | Nch VDSS≤30V | SPD30N03S2L07GBTMA1 vs TPH11003NL |
| RJK03B7DPA-00-J5A | Renesas Electronics Corporation | Check for Price | 30A, 30V, 0.0107ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | SPD30N03S2L07GBTMA1 vs RJK03B7DPA-00-J5A |
| STL28NF3LL | STMicroelectronics | Check for Price | 28A, 30V, 0.0095ohm, N-CHANNEL, Si, POWER, MOSFET, 5 X 5 MM, CHIP SCALE, POWERFLAT-5 | SPD30N03S2L07GBTMA1 vs STL28NF3LL |
| IRLR7821HR | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | SPD30N03S2L07GBTMA1 vs IRLR7821HR |
SPD30N03S2L07GBTMA1 Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2014-03) that offers guidance on PCB layout and thermal design considerations for Power MOSFETs, including the SPD30N03S2L07GBTMA1. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal management.
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The selection of the gate resistor value depends on the specific application requirements, such as switching frequency, gate drive voltage, and PCB layout. A general guideline is to choose a gate resistor value that ensures a trade-off between switching speed and EMI. Infineon's MOSFET selection guide and application notes can provide more detailed guidance on gate resistor selection.
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The maximum allowed avalanche energy for the SPD30N03S2L07GBTMA1 is specified in the datasheet as EAS = 1.6 mJ. To ensure safe operation, it's essential to follow the recommended design guidelines and ensure that the device is operated within the specified limits. This includes considering factors such as drain-source voltage, current, and temperature during avalanche events.
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Yes, the SPD30N03S2L07GBTMA1 can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations. Additionally, proper PCB layout and thermal management are crucial to prevent overheating and Ensure reliable operation.
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Infineon recommends following standard ESD protection procedures, such as using ESD-protected workstations, wearing ESD-protective clothing, and handling devices with ESD-protected tools. Additionally, the SPD30N03S2L07GBTMA1 has built-in ESD protection, but it's still essential to take precautions during handling and manufacturing to prevent damage.