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Part Details for SPD18P06PGBTMA1 by Infineon Technologies AG
Results Overview of SPD18P06PGBTMA1 by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPD18P06PGBTMA1 Information
SPD18P06PGBTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPD18P06PGBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2212859
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Farnell | MOSFET, P-CH, 60V, 18.6A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 9183 |
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$0.4936 / $1.3668 | Buy Now |
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DISTI #
SPD18P06PGBTMA1CT-ND
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DigiKey | MOSFET P-CH 60V 18.6A TO252-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4403 In Stock |
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$0.4131 / $1.3900 | Buy Now |
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DISTI #
SPD18P06PGBTMA1
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Avnet Americas | - Tape and Reel (Alt: SPD18P06PGBTMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3043 / $0.3236 | Buy Now |
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DISTI #
726-SPD18P06PGBTMA1
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Mouser Electronics | MOSFETs P-Ch -60V -18.6A DPAK-2 RoHS: Compliant | 63158 |
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$0.4290 / $1.3000 | Buy Now |
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DISTI #
E02:0323_01884846
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Arrow Electronics | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2510 | Europe - 20000 |
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$0.3986 | Buy Now |
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DISTI #
V72:2272_06384602
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Arrow Electronics | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2306 Container: Cut Strips | Americas - 250 |
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$0.4029 / $1.1379 | Buy Now |
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DISTI #
87990059
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Verical | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 Date Code: 2510 | Americas - 20000 |
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$0.3999 | Buy Now |
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DISTI #
69267115
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Verical | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 51 Package Multiple: 1 Date Code: 2304 | Americas - 9551 |
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$0.3700 / $0.7360 | Buy Now |
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DISTI #
68498845
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Verical | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 16 Package Multiple: 1 Date Code: 2306 | Americas - 250 |
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$0.4029 / $0.8309 | Buy Now |
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Rochester Electronics | SPD18P06P G - P-channel enhancement mode Field-Effect Transistor RoHS: Compliant Status: Active Min Qty: 1 | 5794 |
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$0.3470 / $0.5597 | Buy Now |
Part Details for SPD18P06PGBTMA1
SPD18P06PGBTMA1 CAD Models
SPD18P06PGBTMA1 Part Data Attributes
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SPD18P06PGBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD18P06PGBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AB | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 18.6 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 74.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD18P06PGBTMA1
This table gives cross-reference parts and alternative options found for SPD18P06PGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD18P06PGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPP18P06PHXKSA1 | Infineon Technologies AG | $0.8877 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPD18P06PGBTMA1 vs SPP18P06PHXKSA1 |
| SFI9Z34TU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | SPD18P06PGBTMA1 vs SFI9Z34TU |
| SPP18P06PHXK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPD18P06PGBTMA1 vs SPP18P06PHXK |
| SPP18P06PG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPD18P06PGBTMA1 vs SPP18P06PG |
| SPD18P06PGXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | SPD18P06PGBTMA1 vs SPD18P06PGXT |
| SPU18P06PG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN | SPD18P06PGBTMA1 vs SPU18P06PG |
SPD18P06PGBTMA1 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance would be to have a solid copper plane on the bottom layer, connected to the thermal pad of the device. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2oz copper thickness and to avoid any thermal vias or holes under the device.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, such as providing a good thermal interface between the device and the heat sink, and ensuring good airflow around the device. Additionally, it's recommended to derate the device's power handling capability at higher temperatures to prevent overheating.
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The critical parameters to monitor during operation include the device's junction temperature, drain-source voltage, and drain current. Monitoring these parameters helps to prevent overheating, overvoltage, and overcurrent conditions that can damage the device.
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To protect the device from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices such as TVS diodes or ESD suppressors.
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The recommended soldering conditions for this device include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that prevents thermal shock to the device. It's also recommended to use a solder with a melting point above 217°C.