Part Details for SPD04P10PGBTMA1 by Infineon Technologies AG
Results Overview of SPD04P10PGBTMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SPD04P10PGBTMA1 Information
SPD04P10PGBTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPD04P10PGBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3703604
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Farnell | MOSFET, P-CH, 100V, 4A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 4739 |
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$0.3351 / $0.9282 | Buy Now |
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DISTI #
3703604RL
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Farnell | MOSFET, P-CH, 100V, 4A, TO-252 RoHS: Compliant Min Qty: 500 Lead time: 27 Weeks, 1 Days Container: Reel | 4739 |
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$0.3351 / $0.3976 | Buy Now |
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DISTI #
SPD04P10PGBTMA1
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Avnet Americas | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: SPD04P10PGBTMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
69837841
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Verical | Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 89 Package Multiple: 1 | Americas - 2500 |
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$0.3540 / $0.7290 | Buy Now |
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Rochester Electronics | SPD04P10P G - SIPMOS Power-Transistor, 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1234 |
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$0.2623 / $0.4231 | Buy Now |
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DISTI #
SPD04P10PGBTMA1
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TME | Transistor: P-MOSFET, unipolar, -100V, -4A, 38W, PG-TO252-3 Min Qty: 1 | 0 |
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$0.2670 / $0.7080 | RFQ |
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DISTI #
SPD04P10PGBTMA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2500 |
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$0.2970 / $0.8910 | Buy Now |
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DISTI #
SP000212230
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EBV Elektronik | Trans MOSFET PCH 100V 4A 3Pin2Tab TO252 TR (Alt: SP000212230) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2555 |
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RFQ |
Part Details for SPD04P10PGBTMA1
SPD04P10PGBTMA1 CAD Models
SPD04P10PGBTMA1 Part Data Attributes
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SPD04P10PGBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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SPD04P10PGBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1000 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
SPD04P10PGBTMA1 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the power source, and the input and output tracks should be kept short and wide to minimize inductance.
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The device should be mounted on a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be connected to a solid ground plane to ensure good thermal conductivity.
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The maximum allowed voltage transient is 2x the nominal voltage rating (i.e., 60V) for a duration of less than 100ms. Exceeding this may damage the device.
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The device is rated for operation up to 150°C. However, the maximum junction temperature should not exceed 175°C. Derating may be necessary for high-temperature applications.
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Check for proper PCB layout, soldering, and component placement. Verify the input voltage and current ratings are not exceeded. Use an oscilloscope to check for voltage transients and ringing.