Part Details for SPD04P10PG by Infineon Technologies AG
Results Overview of SPD04P10PG by Infineon Technologies AG
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SPD04P10PG Information
SPD04P10PG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SPD04P10PG
SPD04P10PG CAD Models
SPD04P10PG Part Data Attributes
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SPD04P10PG
Infineon Technologies AG
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Datasheet
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SPD04P10PG
Infineon Technologies AG
Power Field-Effect Transistor, 4A I(D), 100V, 1000ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1000 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
SPD04P10PG Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a large copper area connected to the thermal pad (exposed pad) on the bottom of the device. This helps to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via array under the device are also recommended.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and a robust PCB design to minimize thermal resistance.
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Although the datasheet doesn't specify a maximum Vgs, it's generally recommended to limit Vgs to ±20 V to prevent damage to the device. However, it's essential to consult Infineon's application notes and design guidelines for specific guidance on Vgs limitations.
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Yes, the SPD04P10PG is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's capabilities.
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To protect the SPD04P10PG from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation. Additionally, ensure that the device is stored in an ESD-protective package and handled with ESD-safe tools.