Part Details for SPB80P06PG by Infineon Technologies AG
Results Overview of SPB80P06PG by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
SPB80P06PG Information
SPB80P06PG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPB80P06PG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
69752295
|
Verical | Trans MOSFET P-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 16 Package Multiple: 1 Date Code: 2301 | Americas - 845 |
|
$4.1998 / $5.0063 | Buy Now |
|
|
Bristol Electronics | Min Qty: 3 | 121 |
|
$1.1499 / $2.4640 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 676 |
|
$4.6200 / $9.2400 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 96 |
|
$1.6500 / $3.3000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 22 |
|
$2.3738 / $4.7475 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 6 |
|
$2.6400 / $3.9600 | Buy Now |
|
|
Vyrian | Transistors | 5158 |
|
RFQ |
Part Details for SPB80P06PG
SPB80P06PG CAD Models
SPB80P06PG Part Data Attributes
|
|
SPB80P06PG
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPB80P06PG
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 823 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 340 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB80P06PG
This table gives cross-reference parts and alternative options found for SPB80P06PG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB80P06PG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPB80P06PGATMA1 | Infineon Technologies AG | $2.6180 | Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SPB80P06PG vs SPB80P06PGATMA1 |
| UPFS320P | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, POWERMITE-3 | SPB80P06PG vs UPFS320P |
| STB80PF55T4 | STMicroelectronics | Check for Price | 80A, 55V, 0.018ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | SPB80P06PG vs STB80PF55T4 |
SPB80P06PG Frequently Asked Questions (FAQ)
-
Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
-
The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 1 ohm and 10 ohm. Consult Infineon's application notes and simulation tools to determine the optimal value for your design.
-
The maximum allowed voltage overshoot is not explicitly stated in the datasheet, but Infineon recommends limiting it to 10% of the maximum drain-source voltage (Vds) to prevent damage to the device. In this case, the maximum allowed voltage overshoot would be 80V + 10% = 88V.
-
To ensure proper biasing, follow the recommended startup and shutdown sequences outlined in the datasheet. Additionally, consider using a soft-start circuit to gradually ramp up the gate voltage and prevent inrush currents.
-
While the datasheet specifies an operating temperature range of -40°C to 150°C, Infineon recommends operating the device within a range of -20°C to 125°C for long-term reliability and to minimize degradation.