Part Details for SPB03N60S5 by Infineon Technologies AG
Results Overview of SPB03N60S5 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Motor control systems
SPB03N60S5 Information
SPB03N60S5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPB03N60S5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86149377
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Verical | Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R Min Qty: 635 Package Multiple: 1 Date Code: 0601 | Americas - 1000 |
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$0.4069 / $0.5906 | Buy Now |
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Rochester Electronics | SPB03N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1000 |
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$0.3255 / $0.5250 | Buy Now |
Part Details for SPB03N60S5
SPB03N60S5 CAD Models
SPB03N60S5 Part Data Attributes
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SPB03N60S5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB03N60S5
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 5.7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB03N60S5
This table gives cross-reference parts and alternative options found for SPB03N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB03N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SPB03N60S5 vs IPB80N06S2LH5ATMA1 |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | SPB03N60S5 vs NDB606BEL |
| 2SK3581-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SPB03N60S5 vs 2SK3581-01L |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | SPB03N60S5 vs NP82N055NUG-S18-AY |
| IRFS650B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | SPB03N60S5 vs IRFS650B |
| PHB145NQ06T | NXP Semiconductors | Check for Price | 75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | SPB03N60S5 vs PHB145NQ06T |
| NDB705AEL | Texas Instruments | Check for Price | 75A, 50V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | SPB03N60S5 vs NDB705AEL |
| NDU406AL | Texas Instruments | Check for Price | 15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | SPB03N60S5 vs NDU406AL |
| NDU406A | National Semiconductor Corporation | Check for Price | TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power | SPB03N60S5 vs NDU406A |
| NDP505AE | National Semiconductor Corporation | Check for Price | TRANSISTOR 26 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | SPB03N60S5 vs NDP505AE |
SPB03N60S5 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the SPB03N60S5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum ratings and ensure that the device is not subjected to excessive voltage, current, or temperature stress.
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To ensure the SPB03N60S5 is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate current (IG) should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability and a low output impedance can help to achieve this. Additionally, the PCB layout should be designed to minimize the stray inductance and resistance in the gate circuit.
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The recommended gate resistor value for the SPB03N60S5 depends on the specific application and the gate driver used. A general guideline is to use a gate resistor in the range of 10Ω to 100Ω to limit the gate current and prevent oscillations. However, the optimal value may need to be determined through experimentation and simulation.
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The body diode of the SPB03N60S5 is an inherent part of the MOSFET structure and can conduct current when the MOSFET is turned off. To handle the body diode, ensure that the circuit is designed to accommodate the diode's reverse recovery characteristics, and consider adding a freewheeling diode or a snubber circuit to reduce voltage spikes and ringing.
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The thermal resistance of the SPB03N60S5 package is not explicitly stated in the datasheet, but it can be estimated based on the package type and the device's thermal characteristics. For the TO-220 package, the thermal resistance is typically in the range of 1°C/W to 2°C/W. This value can be used to estimate the device's junction temperature and ensure that it remains within the safe operating range.